GSD2004C
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Vishay Semiconductors
Dual Common Cathode Small Signal High Voltage Switching Diode
FEATURES
Silicon epitaxial planar diode
3
Fast switching dual common cathode diode,
especially suited for applications requiring high
voltage capability
AEC-Q101 qualified
12
Base P/N-E3 - RoHS-compliant, commercial
18108_1
grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
MECHANICAL DATA please see www.vishay.com/doc?99912
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
GSD2004C-E3-08 or GSD2004C-E3-18
GSD2004C Dual diodes common cathode DBC Tape and reel
GSD2004C-HE3-08 or GSD2004C-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V 240 V
R
Peak repetitive reverse voltage V 300 V
RRM
Forward current (continuous) I 225 mA
F
Peak repetitive forward current I 625 mA
FRM
t = 1 s 4A
p
Non-repetitive peak forward current I
FSM
t = 1 s 1 A
p
(1)
Power dissipation P 350 mW
tot
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Typical thermal resistance junction to
R 357 C/W
thJA
(1)
ambient air
Junction temperature T 150 C
j
Storage temperature range T - 65 to + 150 C
stg
Operating temperature range T - 55 to + 150 C
op
Note
(1)
Device on fiberglass substrate
Rev. 1.0, 17-May-13 Document Number: 85424
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000GSD2004C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I = 100 A V 300 V
R BR
V = 240 V I 100 nA
R R
Leakage current
V = 240 V, T = 150 C I 100 A
R j R
I = 20 mA V 0.83 0.87 V
F F
Forward voltage
I = 100 mA V 1V
F F
Diode capacitance V = V = 0, f = 1 MHz C 5pF
F R D
I = I = 30 mA, i = 3 mA,
F R R
Reverse recovery time t 50 ns
rr
R = 100
L
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
5
100
10
T = 150 C
J
4
10
T = 150C
J
10
100C
100C
3
10
25C
1
2
10
25 C
0.1
10
100 200 300 400 500 600 700 800 900 1000
0 50 100 150 200 250
18543
18544
V -Reverse Voltage ( V )
V - Forward Voltage ( mV )
F R
Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 2 - Typical Reverse Characteristics
Layout For RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
2 (0.8)
0.8 (0.03)
15 (0.59)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.0, 17-May-13 Document Number: 85424
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current ( mA)
F
I-Reverse Leakage Current ( nA )
R