333 3 K857PE www.vishay.com Vishay Semiconductors 4-Quadrant Silicon PIN Photodiode FEATURES Package type: surface-mount Technology: epitaxial Package form: top view Dimensions (L x W x H in mm): 4.72 x 4.72 x 0.75 AEC-Q101 qualified High photo sensitivity Floor life: 168 h, MSL 3, according to J-STD-020 Material categorization: DESCRIPTION for definitions of compliance please see K857PE is a 4-quadrant photo detector in surface-mount www.vishay.com/doc 99912 2 package. Each quadrant PD has an active area of 1.6 mm . LINKS TO ADDITIONAL RESOURCES 3D Models Footprints PRODUCT SUMMARY I (A) ra COMPONENT () (nm) 0.1 2 (E = 1.0 mW/cm , = 850 nm, V = 5 V) e R K857PE 8.5 60 690 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM K857PE Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view K857PE-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile Fig. 8 T 260 C sd ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2.0 kV HBM Rev. 1.3, 05-Oct-2021 Document Number: 80136 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D K857PE www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS, SINGLE QUADRANT (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -0.9 1.3 V F F Reverse dark current V = 10 V, E = 0 I - 1 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -11 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -7 - pF R D 2 Short circuit current E = 1 mW/cm , = 850 nm I -8.5 - A e k 2 Temperature coefficient of I E = 1 mW/cm , V = 5 V TK - 0.15 - %/K ra e R Ira 2 E = 1 mW/cm , = 850 nm, V = 5 V I 7 8.5 11 A e R ra Reverse light current 2 E = 1 mW/cm , = 940 nm, V = 5 V I -5.7 - A e R ra Angle of half sensitivity - 60 - Wavelength of peak sensitivity - 840 - nm p Range of spectral bandwidth - 690 to 1050 - nm 0.1 Rise time V = 10 V, R = 50 , = 830 nm t -30 - ns R L r Fall time V = 10 V, R = 50 , = 830 nm t -30 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Values per quadrant q (q = 1, 2, 3, 4) CROSS-TALK SPECIFICATION Laser illumination (850 nm, 65 m spot diameter, radiant power 0.7 mW) of center of PD quadrant 1 (q = 1), V = 5 V applied to all quadrants R, q (q = 1, 2, 3, 4) ILLUMINATED MEASURED PARAMETER TYP. VALUE UNIT Yes Ira 850 1 100 % No Ira 850 2 0.1 % No Ira 850 3 0.1 % No Ira 850 4 0.05 % Axis Title 1000 10000 V = 10 V R 100 1000 10 100 1 0.1 10 50 70 90 110 T - Ambient Temperature (C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.3, 05-Oct-2021 Document Number: 80136 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line I - Reverse Dark Current (nA) ro 1st line 2nd line