LS4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Low forward voltage drop High forward current capability QuadroMELF package AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started High speed switch and general purpose Use in computer and industrial applications Models Available MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS LS4150 LS4150GS18 or LS4150GS08 - Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 50 V RRM Reverse voltage V 50 V R Peak forward surge current t = 1 s I 4A p FSM Forward continuous current I 600 mA F Average forward current V = 0 I 300 mA R F(AV) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 300 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.0, 14-Jul-17 Document Number: 85562 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 LS4150 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.540 0.620 V F F I = 10 mA V 0.660 0.740 V F F Forward voltage I = 50 mA V 0.760 0.860 V F F I = 100 mA V 0.820 0.920 V F F I = 200 mA V 0.870 1 V F F V = 50 V I 100 nA R R Reverse current V = 50 V, T = 150 C I 100 A R j R Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 2.5 pF R HF D I = I = 10 mA to 100 mA, F R Reverse recovery time t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 Scattering Limit 10 1 0.1 V = 50 V R 0.01 0 40 80 120 160 200 T - Junction Temperature (C) 94 9100 J Fig. 1 - Reverse Current vs. Junction Temperature 1000 100 Scattering Limit 10 1 T = 25 C J 0.1 0 0.4 0.8 1.2 1.6 2.0 94 9162 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.0, 14-Jul-17 Document Number: 85562 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Reverse Current (A) F R