SFH615A-3X018T www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS FEATURES Excellent CTR linearity depending on forward A 1 4 C current C 2 3 E Isolation test voltage, 5300 V RMS Fast switching times Low CTR degradation 17448-5 1 Low coupling capacitance Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The SFH615A-3X018T features a variety of transfer ratios, APPLICATIONS low coupling capacitance and high isolation voltage. This Switchmode power supply coupler has a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is Telecom incorporated in a plastic SMD package. Battery powered equipment The coupling devices are designed for signal transmission AGENCY APPROVALS between two electrically separated circuits. UL1577, file no. E52744 system code H or J, double protection DIN EN 60747-5-5 (VDE 0884-5) available with option 1 cUL tested to CSA 22.2 bulletin 5A BSI IEC 60950, IEC 60065 FIMKO EN6005, EN60950-1 ORDERING INFORMATION SMD-4 SF H 6 1 5 A - 3 X 0 1 8 T PART NUMBER CTR PACKAGE OPTION TAPE BIN AND 9.27 mm REEL CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA VDE, UL, cUL, BSI, FIMKO 100 to 200 SMD-4, option 8 SFH615A-3X018T Rev. 1.0, 08-Feb-13 Document Number: 84185 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SFH615A-3X018T www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R DC forward current I 60 mA F Surge forward current t 10 s I 2.5 A p FSM OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO I 50 mA C Collector current t 1 ms I 100 mA p C COUPLER Isolation test voltage t = 1 s V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Insulation thickness between emitter and detector 0.4 mm Comparative tracking index per CTI 175 DIN IEC112/VDE0303 part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature range T - 55 to + 150 C stg Ambient temperature range T - 55 to +100 C amb (1) Soldering temperature max. 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). 200 150 Phototransistor 100 50 Diode 0 0 255075 100 125 150 18483 T - Ambient Temperature (C) amb Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature Rev. 1.0, 08-Feb-13 Document Number: 84185 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) tot