SFH615A-4X018T Vishay

SFH615A, SFH6156 Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS FEATURES Excellent CTR linearity depending on forward current Isolation test voltage, 5300 V RMS 1 Fast switching times A 1 4 C Low CTR degradation 1 C 2 3 E Low coupling capacitance 17448 Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION The SFH615A (DIP) and SFH6156 (SMD) feature a variety APPLICATIONS of transfer ratios, low coupling capacitance and high isolation Switchmode power supply voltage. These couplers have a GaAs infrared diode emitter, Telecom which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD Battery powered equipment package. The coupling devices are designed for signal transmission AGENCY APPROVALS between two electrically separated circuits. UL1577, file no. E52744 system code H or J, double The couplers are end-stackable with 2.54 mm lead spacing. protection Creepage and clearance distances of > 8 mm are achieved DIN EN 60747-5-5 (VDE 0884) available with option 1 with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 V or DC. Specifications subject to change. RMS ORDER INFORMATION PART REMARKS SFH615A-1 CTR 40 % to 80 %, DIP-4 SFH615A-2 CTR 63 % to 125 %, DIP-4 SFH615A-3 CTR 100 % to 200 %, DIP-4 SFH615A-4 CTR 160 % to 320 %, DIP-4 SFH6156-1 CTR 40 % to 80 %, SMD-4 SFH6156-2 CTR 63 % to 125 %, SMD-4 SFH6156-3 CTR 100 % to 200 %, SMD-4 SFH6156-4 CTR 160 % to 320 %, SMD-4 SFH615A-1X006 CTR 40 % to 80 %, DIP-4 400 mil (option 6) SFH615A-1X007 CTR 40 % to 80 %, SMD-4 (option 7) SFH615A-2X006 CTR 63 % to 125 %, DIP-4 400 mil (option 6) SFH615A-2X007 CTR 63 % to 125 %, SMD-4 (option 7) SFH615A-2X009 CTR 63 % to 125 %, SMD-4 (option 9) SFH615A-3X006 CTR 100 % to 200 %, DIP-4 400 mil (option 6) SFH615A-3X007 CTR 100 % to 200 %, SMD-4 (option 7) SFH615A-3X008 CTR 100 % to 200 %, SMD-4 (option 8) SFH615A-3X009 CTR 100 % to 200 %, SMD-4 (option 9) SFH615A-4X006 CTR 160 % to 320 %, DIP-4 400 mil (option 6) SFH615A-4X007 CTR 160 % to 320 %, SMD-4 (option 7) SFH615A-4X008 CTR 160 % to 320 %, SMD-4 (option 8) SFH615A-4X009 CTR 160 % to 320 %, SMD-4 (option 9) Note For additional information on the available options refer to option information. See tape and reel section for 4 pin optocouplers T0 with 90 rotation. Document Number: 83671 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 2.2, 05-Oct-09 631 SFH615A, SFH6156 Optocoupler, Phototransistor Output, Vishay Semiconductors High Reliability, 5300 V RMS (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R DC forward current I 60 mA F Surge forward current t 10 s I 2.5 A p FSM OUTPUT Collector emitter voltage V 70 V CE Emitter collector voltage V 7V ECO I 50 mA C Collector current t 1 ms I 100 mA p C COUPLER Isolation test voltage t = 1 s V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Insulation thickness between emitter and detector 0.4 mm Comparative tracking index per CTI 175 DIN IEC112/VDE 0303 part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature range T - 55 to + 150 C stg Ambient temperature range T - 55 to +100 C amb max. 10 s, dip soldering distance to (2) Soldering temperature T 260 C sld seating plane 1.5 mm Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). 200 150 Phototransistor 100 50 Diode 0 0 255075 100 125 150 18483 T - Ambient Temperature (C) amb Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83671 632 Rev. 2.2, 05-Oct-09 P - Power Dissipation (mW) tot