P GND VIN G L CGND VDRV SiC531, SiC531A www.vishay.com Vishay Siliconix 30 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC531 and SiC531A are integrated power stage Thermally enhanced PowerPAK MLP4535-22L solutions optimized for synchronous buck applications package to offer high current, high efficiency, and high power Vishays Gen IV MOSFET technology and a density performance. Packaged in Vishays proprietary low-side MOSFET with integrated Schottky 4.5 mm x 3.5 mm MLP package, SiC531 and SiC531A diode enable voltage regulator designs to deliver up to 30 A Delivers up to 30 A continuous current, 35 A at 10 ms peak continuous current per phase. current The internal power MOSFETs utilize Vishays High efficiency performance state-of-the-art Gen IV TrenchFET technology that delivers High frequency operation up to 1.5 MHz industry benchmark performance to significantly reduce switching and conduction losses. Power MOSFETs optimized for 19 V input stage The SiC531 and SiC531A incorporate an advanced 3.3 V (SiC531A) / 5 V (SiC531) PWM logic with tri-state and MOSFET gate driver IC that features high current driving hold-off capability, adaptive dead-time control, an integrated Zero current detect control for light load efficiency bootstrap Schottky diode, and zero current detection to improvement improve light load efficiency. The drivers are also Low PWM propagation delay (< 20 ns) compatible with a wide range of PWM controllers, support Under voltage lockout for V tri-state PWM, and 3.3 V (SiC531A) / 5 V (SiC531) PWM CIN logic. Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Multi-phase VRDs for computing, graphics card and memory Intel IMVP-8 VRPower delivery -V , V , V Skylake, Kabylake platforms CORE GRAPHICS SYSTEM AGENT -V for Apollo Lake platforms CCGI Up to 18 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH VOUT Gate PWM driver PWM controller Fig. 1 - SiC531 and SiC531A Typical Application Diagram S15-2799-Rev. A, 30-Nov-15 Document Number: 65999 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiC531, SiC531A www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 11 10 9 8 7 6 25 V 12 5 PHASE SWH V IN 26 P V 13 GND 4 BOOT SWH V 14 3 C SWH GND 23 C V 15 GND 2 V SWH CIN 24 V 16 1 ZCD EN SWH GL 17 18 19 20 21 22 Fig. 2 - SiC531 and SiC531A Pin Configuration PIN DESCRIPTION PIN NUMBER NAME FUNCTION The ZCD EN pin enables or disables Diode Emulation. When ZCD EN is LOW, diode emulation is allowed. When ZCD EN is HIGH, continuous conduction mode is forced. 1 ZCD EN ZCD EN can also be put in a high impedance mode by floating the pin. If both ZCD EN and PWM are floating, the device shuts down and consumes typically 3 A (9 A max.) current. 2V Supply voltage for internal logic circuitry CIN 3, 23 C Signal ground GND 4 BOOT High-side driver bootstrap voltage 5 PHASE Return path of high-side gate driver 6 to 8, 25 V Power stage input voltage. Drain of high-side MOSFET IN 9 to 11, 17, 18, 20, 26 P Power ground GND 12 to 16 V Phase node of the power stage SWH 19, 24 GL Low-side MOSFET gate signal 21 V Supply voltage for internal gate driver DRV 22 PWM PWM input logic ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE SiC531CD-T1-GE3 SiC531 5 V PWM optimized PowerPAK MLP4535-22L SiC531ACD-T1-GE3 SiC531A 3.3 V PWM optimized SiC531ADB and SiC531DB Reference board S15-2799-Rev. A, 30-Nov-15 Document Number: 65999 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P P GND GND P P GND GND P GND GL V P IN GND V V IN DRV V PWM IN