X-On Electronics has gained recognition as a prominent supplier of SiC631CD-T1-GE3 Gate Drivers across the USA, India, Europe, Australia, and various other global locations. SiC631CD-T1-GE3 Gate Drivers are a product manufactured by Vishay. We provide cost-effective solutions for Gate Drivers, ensuring timely deliveries around the world.

SiC631CD-T1-GE3 Vishay

Hot SiC631CD-T1-GE3 electronic component of Vishay
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Part No.SiC631CD-T1-GE3
Manufacturer: Vishay
Category: Gate Drivers
Description: Gate Drivers 55A, 4.5V - 24V DrMOS VRPower
Datasheet: SiC631CD-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7233 ea
Line Total: USD 1.72 
Availability - 6761
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6761
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7233
10 : USD 1.545
30 : USD 1.4473
100 : USD 1.3371
500 : USD 1.2858
1000 : USD 1.2638

3500
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 3.4177
10 : USD 3.0937
100 : USD 2.5485
250 : USD 2.4012
500 : USD 2.1655
1000 : USD 1.8414
3000 : USD 1.7678
6000 : USD 1.7678
9000 : USD 1.7088

   
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We are delighted to provide the SiC631CD-T1-GE3 from our Gate Drivers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiC631CD-T1-GE3 and other electronic components in the Gate Drivers category and beyond.

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P GND V IN GL C GND V DRV SiC631 www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP55-31L The SiC631 is integrated power stage solutions optimized package for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged Vishays Gen IV MOSFET technology and a in Vishays proprietary 5 mm x 5 mm MLP package, SiC631 low-side MOSFET with integrated Schottky enables voltage regulator designs to deliver up to 50 A diode continuous current per phase. Delivers in excess of 50 A continuous current, 55 A at The internal power MOSFETs utilizes Vishays 10 ms peak current state-of-the-art Gen IV TrenchFET technology that delivers High efficiency performance industry benchmark performance to significantly reduce High frequency operation up to 2 MHz switching and conduction losses. Power MOSFETs optimized for 19 V input stage The SiC631 incorporates an advanced MOSFET gate driver 5 V PWM logic with tri-state and hold-off IC that features high current driving capability, adaptive Supports PS4 mode light load requirement for IMVP8 with dead-time control, an integrated bootstrap Schottky diode, low shutdown supply current (5 V, 3 A) and zero current detection to improve light load efficiency. Under voltage lockout for V CIN The driver is also compatible with a wide range of PWM controllers, supports tri-state PWM, and 5 V PWM logic. Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 A user selectable diode emulation mode (ZCD EN ) is included to improve the light load performance. The device APPLICATIONS also supports PS4 mode to reduce power consumption when system operates in standby state. Multi-phase VRDs for computing, graphics card and memory Intel IMVP-8 VRPower delivery - V , V , V Skylake, Kabylake CORE GRAPHICS SYSTEM AGENT platforms - V for Apollo Lake platforms CCGI Up to 24 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH V OUT Gate PWM driver PWM controller Fig. 1 - SiC631 Typical Application Diagram S17-1583-Rev. D, 16-Oct-17 Document Number: 67104 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V P GND SWH V P GND SWH P V GND SWH GL P GND P GND V V DRV IN N.C. V IN N.C. V IN SiC631 www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 PWM 1 1 PWM 23 V V 23 SWH SWH GL GL ZCD EN 2 2 ZCD EN 22 V V 22 SWH SWH 32 CGND V 3 C 3 V CIN GND CIN 21 V V 21 SWH SWH N.C. 4 4 N.C. 20 V V 20 SWH SWH 35 BOOT BOOT 5 5 PGND 19 V V 19 SWH SWH P GND 6 6 N.C. V 18 N.C. 18 V SWH SWH 34 VIN PHASE 7 17 V V 17 7 PHASE SWH SWH V IN 8 16 V V 16 8 V V SWH SWH IN IN 9 10 11 12 13 14 15 15 14 13 12 11 10 9 Top view Bottom view Fig. 2 - SiC631 Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1 PWM PWM input logic The ZCD EN pin enables or disables diode emulation. When ZCD EN is LOW, diode emulation is allowed. When ZCD EN is HIGH, continuous conduction mode is forced. 2 ZCD EN ZCD EN can also be put in a high impedance mode by floating the pin. If both ZCD EN and PWM are floating, the device shuts down and consumes typically 3 A (9 A max.) current. 3V Supply voltage for internal logic circuitry CIN 5 BOOT High-side driver bootstrap voltage Pin 4 can be either left floating or connected to C . Internally it is either GND P/N P/N connected to GND or not internally connected depending on manufacturing LL LL location. 4, 6, 30, 31 N.C. G Y W W T Y W W Factory code G on line 3, pin 4 = C GND Factory code T on line 3, pin 4 = not internally connected 7 PHASE Return path of high-side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high-side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low-side MOSFET gate signal 29 V Supply voltage for internal gate driver DRV 32 C Signal ground GND ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC631CD-T1-GE3 PowerPAK MLP55-31L SiC631 5 V PWM optimized SiC631DB Reference board S17-1583-Rev. D, 16-Oct-17 Document Number: 67104 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P V GND SWH P V GND SWH P GND V SWH P GL GND P GND V V IN DRV V N.C. IN V N.C. IN

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8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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