P GND V IN GL C GND V DRV SiC632, SiC632A www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP55-31L The SiC632 and SiC632A are integrated power stage package solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density Vishays Gen IV MOSFET technology and a low performance. Packaged in Vishays proprietary 5 mm x 5 mm side MOSFET with integrated Schottky diode MLP package, SiC632 and SiC632A enables voltage Delivers up to 50 A continuous current regulator designs to deliver up to 50 A continuous current High efficiency performance per phase. High frequency operation up to 1.5 MHz The internal power MOSFETs utilizes Vishays Power MOSFETs optimized for 19 V input stage state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce 3.3 V (SiC632A) / 5 V (SiC632) PWM logic with tri-state and switching and conduction losses. hold-off Zero current detect control for light load efficiency The SiC632 and SiC632A incorporate an advanced improvement MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated Low PWM propagation delay (< 20 ns) bootstrap Schottky diode, a thermal warning (THWn) that Faster disable alerts the system of excessive junction temperature, and Thermal monitor flag zero current detection to improve light load efficiency. The Under voltage lockout for V drivers are also compatible with a wide range of PWM CIN controllers and supports tri-state PWM, 3.3 V (SiC632A) / Material categorization: for definitions of compliance 5 V (SiC632) PWM logic. please see www.vishay.com/doc 99912 APPLICATIONS Multi-phase VRDs for computing, graphics card and memory Intel IMVP-8 VRPower delivery -V , V , V Skylake, Kabylake platforms CORE GRAPHICS SYSTEM AGENT -V for Apollo Lake platforms CCGI Up to 24 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH DSBL V OUT Gate PWM driver PWM controller THWn Fig. 1 - SiC632 and SiC632A Typical Application Diagram S19-0567-Rev. D, 22-Jul-2019 Document Number: 62992 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000V P SWH GND P V GND SWH P V GND SWH GL P GND P GND V V DRV IN THWn V IN DSBL V IN SiC632, SiC632A www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 1 1 PWM PWM 23 V V 23 SWH SWH GL GL ZCD EN 2 2 ZCD EN 22 V V 22 SWH SWH 32 CGND V V 3 C 3 CIN CIN 21 V V 21 GND SWH SWH C 4 4 C GND 20 V V 20 GND SWH SWH 35 BOOT BOOT 5 V 19 5 PGND 19 V SWH SWH P GND N.C. 6 6 N.C. 18 V V 18 SWH SWH 34 VIN PHASE 7 17 V V 17 7 PHASE SWH SWH V IN V 8 16 V V 16 8 V IN SWH SWH IN 9 10 11 12 13 14 15 15 14 13 12 11 10 9 Top view Bottom view Fig. 2 - SiC632 and SiC632A Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1 PWM PWM input logic 2 ZCD EN ZCD control. Active low 3V Supply voltage for internal logic circuitry CIN 4, 32 C Signal ground GND 5 BOOT High side driver bootstrap voltage 6 N.C. Not connected internally, can be left floating or connected to ground 7 PHASE Return path of high side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low side MOSFET gate signal 29 V Supply voltage for internal gate driver DRV 30 THWn Thermal warning open drain output 31 DSBL Disable pin. Active low ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC632CD-T1-GE3 PowerPAK MLP55-31L SiC632 5 V PWM optimized SiC632ACD-T1-GE3 PowerPAK MLP55-31L SiC632A 3.3 V PWM optimized SiC632DB / SiC632ADB Reference board S19-0567-Rev. D, 22-Jul-2019 Document Number: 62992 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P V GND SWH P V GND SWH P GND V SWH P GL GND P GND V V IN DRV V THWn IN V DSBL IN