6.15 mm
SQJA90EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 C MOSFET
FEATURES
PowerPAK SO-8L Single
TrenchFET power MOSFET
AEC-Q101 qualified
100 % R and UIS tested
g
D
Material categorization:
for definitions of compliance please see
1
S
www.vishay.com/doc?99912
2
S
3
D
S
4
1 G
Top View Bottom View
PRODUCT SUMMARY
G
V (V) 80
DS
R ( ) at V = 10 V 0.0076
DS(on) GS
I (A) 60
D
N-Channel MOSFET
Configuration Single
S
Package PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-source voltage V 80
DS
V
Gate-source voltage V 20
GS
T = 25 C 60
C
Continuous drain current I
D
T = 125 C 37
C
Continuous source current (diode conduction) I 60 A
S
a
Pulsed drain current I 160
DM
Single pulse avalanche current I 34
AS
L = 0.1 mH
Single pulse avalanche energy E 57 mJ
AS
T = 25 C 68
C
a
Maximum power dissipation P W
D
T = 125 C 22
C
Operating junction and storage temperature range T , T -55 to +175
J stg
C
c, d
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLLIMITUNIT
b
Junction-to-ambient PCB Mount R 68
thJA
C/W
Junction-to-case (drain) R 2.2
thJC
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-2224-Rev. A, 31-Oct-16 Document Number: 67439
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5.13 mmSQJA90EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0, I = 250 A 80 - -
DS GS D
V
Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 0 V V = 80 V - - 1
GS DS
Zero gate voltage drain current I V = 0 V V = 80 V, T = 125 C - - 50 A
DSS GS DS J
V = 0 V V = 80 V, T = 175 C - - 150
GS DS J
a
On-state drain current I V = 10 V V 5 V 30 - - A
D(on) GS DS
V = 10 V I = 10 A - 0.0063 0.0076
GS D
a
Drain-source on-state resistance R V = 10 V I = 10 A, T = 125 C - - 0.0121
DS(on) GS D J
V = 10 V I = 10 A, T = 175 C - - 0.0148
GS D J
b
Forward transconductance g V = 15 V, I = 10 A - 45 - S
fs DS D
b
Dynamic
Input capacitance C - 2629 3500
iss
Output capacitance C -V = 0 V V = 25 V, f = 1 MHz14872000 pF
oss GS DS
Reverse transfer capacitance C -5070
rss
c
Total gate charge Q -36 55
g
c
Gate-source charge Q -1V = 10 V V = 40 V, I = 5 A0- nC
gs GS DS D
c
Gate-drain charge Q -6-
gd
Gate resistance R f = 1 MHz 0.18 0.39 0.62
g
c
Turn-on delay time t -16 25
d(on)
c
Rise time t -5 10
r
V = 40 V, R = 8
DD L
ns
c I 5 A, V = 10 V, R = 1
D GEN g
Turn-off delay time t -2640
d(off)
c
Fall time t -1930
f
b
Source-Drain Diode Ratings and Characteristics
a
Pulsed current I -- 160 A
SM
Forward voltage V I = 10 A, V = 0 - 0.8 1.5 V
SD F GS
Body diode reverse recovery time t - 64 130 ns
rr
Body diode reverse recovery charge Q - 108 220 nC
rr
I = 10 A, di/dt = 100 A/s
F
Reverse recovery fall time t -31 -
a
ns
Reverse recovery rise time t -34 -
b
Body diode peak reverse recovery current I --3.1 -6 A
RM(REC)
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2224-Rev. A, 31-Oct-16 Document Number: 67439
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000