TCST1030, TCST1030L Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 8.3 x 4.7 x 8.15 Gap (in mm): 3.1 19171 1 Aperture: none Typical output current under test: I = 2.4 mA C Daylight blocking filter 21837 Emitter wavelength: 950 nm DESCRIPTION Lead (Pb)-free soldering released The TCST1030 and TCST1030L are transmissive sensors Compliant to RoHS directive 2002/95/EC and in that include an infrared emitter and phototransistor, located accordance to WEEE 2002/96/EC face-to-face on the optical axes in a leaded package which blocks visible light. TCST1030L is the long lead version. APPLICATIONS Optical switch Shaft encoder Detection of opaque material such as paper Detection of magnetic tapes PRODUCT SUMMARY TYPICAL OUTPUT DAYLIGHT (1) PART NUMBER GAP WIDTH APERTURE WIDTH CURRENT UNDER TEST BLOCKING FILTER (mm) (mm) (mA) INTEGRATED TCST1030 3.1 - 2.4 Yes TCST1030L 3.1 - 2.4 Yes Note (1) Conditions like in table basic characteristics/coupler ORDERING INFORMATION (1) ORDERING CODE PACKAGING VOLUME REMARKS TCST1030 Tube MOQ: 5200 pcs, 65 pcs/tube 3.4 mm lead length TCST1030L Tube MOQ: 2600 pcs, 65 pcs/tube 16 mm lead length Note (1) MOQ: minimum order quantity (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T 25 C P 250 mW amb tot Ambient temperature range T - 25 to + 85 C amb Storage temperature range T - 25 to + 100 C stg Soldering temperature 1.6 mm from case, t 10 s T 260 C sd INPUT (EMITTER) Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j Document Number: 83763 For technical questions, contact: sensorstechsupport vishay.com www.vishay.com Rev. 1.7, 17-Aug-09 1 TCST1030, TCST1030L Transmissive Optical Sensor with Vishay Semiconductors Phototransistor Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR) Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 100 mA C Power dissipation T 25 C P 150 mW amb V Junction temperature T 100 C j Note (1) T = 25 C, unless otherwise specified amb ABSOLUTE MAXIMUM RATINGS 400 300 Coupled device 200 Phototransistor IR-diode 100 0 0 30 60 90 120 150 T - Ambient Temperature (C) 95 11088 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature (1) BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current V = 5 V, I = 10 mA I 1.2 2.4 mA CE F C Collector emitter saturation I = 10 mA, I = 1 mA V 0.8 V F C CEsat voltage INPUT (EMITTER) Forward voltage I = 60 mA V 1.25 1.5 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT (DETECTOR) Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 10 A V7V E ECO Collector dark current V = 25 V, I = 0 A, E = 0 lx I 10 100 nA CE F CEO SWITCHING CHARACTERISTICS I = 1 mA, V = 5 V, C CE Turn-on time t 15 s on R = 100 (see figure 2) L I = 1 mA, V = 5 V, C CE Turn-off time t 10 s off R = 100 (see figure 2) L Note (1) T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: sensorstechsupport vishay.com Document Number: 83763 2 Rev. 1.7, 17-Aug-09 P - Power Dissipation (mW)