End of Life - Last Available Purchase Date: 31-December-2021 TSPF6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 890 nm, GaAlAs / Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 22 Low forward voltage 94 8389 Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TSPF6200 is an infrared, 890 nm emitting diode in GaAlAs / APPLICATIONS double hetero (DH) technology with high radiant power, high speed, and with typical receiving characteristics, TSPF6200 Metering systems is molded in a blue gray tinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r TSPF6200 55 22 890 50 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSPF6200 Bulk MOQ: 3000 pcs, 3000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction to ambient J-STD-051, leads 7 mm soldered on PCB R 230 K/W thJA Rev. 1.4, 07-Jul-2021 Document Number: 82425 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life - Last Available Purchase Date: 31-December-2021 TSPF6200 www.vishay.com Vishay Semiconductors 180 120 160 100 R = 230 K/W 140 thJA 120 80 R = 230 K/W thJA 100 60 80 60 40 40 20 20 0 0 0 102030405060708090100 0 102030405060708090100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V - 1.42 1.7 V F p F Forward voltage I = 1 A, t = 100 s V -3.0 - V F p F Temperature coefficient of V I = 100 mA TK --1.7 - mV/K F F VF Reverse current V = 5 V I - 100 nA R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C - 160 - pF R j I = 100 mA, t = 20 ms I 30 55 90 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 520 - mW/sr F p e 2 Short circuit current E = 1 mW/cm , = 870 nm I -10- A e k 2 Open circuit voltage E = 1 mW/cm , = 870 nm V -1.0 - V e 0 2 Reverse light current E = 1 mW/cm , = 870 nm, V = 5 V I -10- A e R ra Radiant power I = 100 mA, t = 20 ms -40- mW F p e Temperature coefficient of I = 100 mA TK - -0.35 - %/K e F e Angle of half intensity - 22 - Peak wavelength I = 100 mA 870 890 910 nm F p Spectral bandwidth I = 100 mA -40- nm F Temperature coefficient of I = 100 mA TK -0.25 - nm/K p F p Rise time I = 100 mA t -50- ns F r Fall time I = 100 mA t -50- ns F f Rev. 1.4, 07-Jul-2021 Document Number: 82425 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F