333 3 USB260 www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES Glass passivated pellet chip junction Ideal for automated placement Ultrafast recovery times for high efficiency Low forward voltage, low power losses High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB (DO-214AA) AEC-Q101 qualified available Cathode Anode - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS For use in high frequency rectification, and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. PRIMARY CHARACTERISTICS I 2.0 A F(AV) MECHANICAL DATA V 600 V RRM Case: SMB (DO-214AA) I 90 A FSM Molding compound meets UL 94 V-0 flammability rating t 30 ns rr Base P/N-M3 - halogen-free, RoHS-compliant V at I 1.0 V F F Base P/NHM3 - halogen-free, RoHS-compliant, and T max. 150 C J AEC-Q101 qualified Package SMB (DO-214AA) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL USB260 UNIT Device marking code U60 Maximum repetitive peak reverse voltage V 600 V RRM Maximum RMS voltage V 420 V RMS Maximum DC blocking voltage V 600 V DC Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 90 A FSM Non-repetitive avalanche energy at I = 2.0 A, L = 10 mH, T = 25 C E 20 mJ AS J AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 09-Apr-2020 Document Number: 89483 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DUSB260 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 10 A T = 25 C V 600 (minimum) V R J BR I = 1 A T = 25 C 1.25 - F J (1) Instantaneous forward voltage T = 25 C V 1.5 1.6 V J F I = 2.0 A F T = 125 C 1.0 1.1 J T = 25 C -5.0 J (2) Maximum reverse current V = 600 V I A R R T = 125 C 30 100 J Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 30 ns F R rr rr Typical junction capacitance 4.0 V, 1 MHz C 45 pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL USB260 UNIT (1) R 45 JA Typical thermal resistance C/W (1) R 10 JL Note (1) Units mounted on PCB with 2.0 x 2.0 copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE USB260-M3/52T 0.096 52T 750 7 diameter plastic tape and reel USB260-M3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel USB260HM3/52T 0.096 52T 750 7 diameter plastic tape and reel USB260HM3/5BT 0.096 5BT 3200 13 diameter plastic tape and reel Revision: 09-Apr-2020 Document Number: 89483 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000