333 3 VEMD4010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface-mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.7 2 Radiant sensitive area (in mm ): 0.42 Operating temperature range: T = -40 C OP to +110 C Angle of half sensitivity: = 55 Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES APPLICATIONS 3D Models Footprints High speed photo detector Photo interrupters DESCRIPTION Automotive sensors VEMD4010X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD ) 2 with a 0.42 mm sensitive area. PRODUCT SUMMARY I (A) ra COMPONENT () (nm) 0.5 2 at E = 1 mW/cm , = 950 nm, V = 5 V e R VEMD4010X01 2.4 55 550 to 1040 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD4010X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile Fig. 8 T 260 C sd Rev. 1.1, 15-Jul-2020 Document Number: 80134 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VEMD4010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1.1 1.3 V F F Reverse dark current V = 5 V, E = 0 I -1 3 nA R ro V = 0 V, f = 1 MHz, E = 0 C -7 - pF R D Diode capacitance V = 5 V, f = 1 MHz, E = 0 C -2.5 - pF R D 2 Short circuit current E = 1 mW/cm , = 950 nm I -2.2 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK -0.1 - %/K k e Ik 2 Reverse light current E = 1 mW/cm , = 950 nm, V = 5 V I 1.9 2.4 3.1 A e R ra Angle of half sensitivity - 55 - Wavelength of peak sensitivity -910 - nm p Range of spectral bandwidth - 550 to 1040 - nm 0.5 Rise time V = 5 V, R = 1 k, = 820 nm t -100 - ns R L r Fall time V = 5 V, R = 1 k, = 820 nm t -100 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Axis Title Axis Title 1000 10000 120 10000 V = 5 V R 115 V = 5 V, = 950 nm R 110 100 1000 1000 105 100 95 10 100 100 90 85 80 10 1 10 50 70 90 110 -40 -20 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 15-Jul-2020 Document Number: 80134 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line I - Reverse Dark Current (nA) ro 1st line 2nd line 2nd line I - Relative Reverse Light Current (%) ra,rel 1st line 2nd line