VESD05A5A-HSF www.vishay.com Vishay Semiconductors 5-Line ESD Protection Diode Array in LLP75 FEATURES 6 54 Ultra compact LLP75-6L package Low profile < 0.6 mm 5-line ESD protection Low leakage current I < 0.1 A R 2 1 3 Low load capacitance C = 13 pF D 19956 20453 1 ESD immunity acc. IEC 61000-4-2 15 kV contact discharge MARKING (example only) 15 kV air discharge XX Working voltage range V = 5 V RWM YY e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) 21001 Material categorization: for definitions of compliance Dot = pin 1 marking please see www.vishay.com/doc 99912 XX = date code YY = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A5A-HSF VESD05A5A-HSF-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A5A-HSF LLP75-6L AR 4.2 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A5A-HSF PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2) 2.5 A acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse current I PPM BiSy-mode: each input (pin 1 to pin 6) to any other input pin. 2.5 A Pin 2 not connected. Acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2) 33 W acc. IEC 61000-4-5 t = 8/20 s single shot p Peak pulse power P PP BiSy-mode: each input (pin 1 - pin 6) to any other input pin. 43 W Pin 2 not connected. Acc. IEC 61000-4-5 t = 8/20 s single shot p Contact 15 kV discharge acc. IEC61000-4-2 10 pulses ESD immunity V ESD BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2) Air 15 kV discharge Contact acc. IEC 61000-4-2 10 pulses 10 kV discharge ESD immunity BiSy-mode: each input (pin 1 to pin 6) to any other input pin. V ESD Air Pin 2 not connected. 10 kV discharge Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.7, 04-Jan-2019 Document Number: 81655 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A5A-HSF www.vishay.com Vishay Semiconductors APPLICATION NOTE: a. With the VESD05A5A-HSF 5 different signal or data lines can be clamped to ground. Due to the different clamping levels i n forward and reverse direction the VESD05A5A-HSF clamping behavior is bidirectional and asymmetrical (BiAs). L1 L2 L3 6 54 1 2 3 L4 L5 19958 b. If symmetrical clamping behaviour is required the VESD05A5A-HSF can also be used as a bidirectional symmetrical protection device protecting up to 4 lines. In this case pin no. 2 must not be connected. L1 L2 L3 6 54 2 1 3 L4 19959 ELECTRICAL CHARACTERISTICS VESD05A5A-HSF (Between pin 1, 3, 4, 5 or 6, and pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 5 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 0.1 A V 5- - V R R Max. reverse current at V = 5 V I - < 0.01 0.1 A R R Reverse breakdown voltage at I = 1 mA V 66.7 7.5 V R BR at I = 1 A V -9 10 V PP C Reverse clamping voltage at I = I = 2.5 A V -12 13 V PP PPM C at I = 1 A V -2 2.5 V PP F Forward clamping voltage at I = I = 2.5 A V -3.2 4 V PP PPM F at V = 0 V f = 1 MHz C -13 15 pF R D Line capacitance at V = 2.5 V f = 1 MHz C -8- pF R D Rev. 1.7, 04-Jan-2019 Document Number: 81655 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000