VS-12TQ035-M3, VS-12TQ040-M3, VS-12TQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base 150 C T operation J cathode 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode 2L TO-220AC Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 15 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R V at I 0.50 V F F DESCRIPTION I max. 70 mA at 125 C RM The VS-12TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. T max. 150 C J The proprietary barrier technology allows for reliable E 16 mJ AS operation up to 150 C junction temperature. Typical Package 2L TO-220AC applications are in switching power supplies, converters, Circuit configuration Single freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 15 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 990 A FSM p V 15 A , T = 125 C 0.50 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12TQ035-M3 VS-12TQ040-M3 VS-12TQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 120 C, rectangular waveform 15 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 990 surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 250 See fig. 7 RRM Non-repetitive avalanche energy E T = 25 C, I = 2.4 A, L = 5.5 mH 16 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2.4 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 23-Nov-17 Document Number: 96261 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12TQ035-M3, VS-12TQ040-M3, VS-12TQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.56 T = 25 C J 30 A 0.71 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.50 T = 125 C J 30 A 0.64 T = 25 C 1.75 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 70 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 12TQ035 Marking device Case style 2L TO-220AC 12TQ040 12TQ045 Revision: 23-Nov-17 Document Number: 96261 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000