VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A, 12 A FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Standard JEDEC types Stud cathode and stud anode versions Fully characterized reverse recovery conditions Material categorization: for definitions of compliance DO-203AA (DO-4) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS DC power supplies Inverters PRODUCT SUMMARY Converters I 6 A, 12 A F(AV) Choppers Package DO-203AA (DO-4) Ultrasonic systems Circuit configuration Single diode Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS SYMBOL TEST CONDITIONS 1N3879(R) TO 1N3883(R) 1N3889(R) TO 1N3893(R) UNITS (1) (1) 6 12 A I F(AV) T maximum 100 100 C C I 9.5 19 A F(RMS) 50 Hz 72 145 I A FSM (1) (1) 60 Hz 75 150 50 Hz 26 103 2 2 I t A s 60 Hz 23 94 2 2 I t 363 856 I s (1) (1) V Range 50 to 400 50 to 400 V RRM t See Recovery Characteristics table See Recovery Characteristics table ns rr T Range -65 to +150 -65 to +150 C J Note (1) JEDEC registered values Revision: 28-May-15 Document Number: 93144 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1N3879(R), VS-1N3889(R) Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM I MAXIMUM I MAXIMUM I MAXIMUM RRM RRM RRM TYPE VOLTAGE REPETITIVE PEAK AND NON-REPETITIVE AT T = 25 C AT T = 100 C AT T = 150 C J J J NUMBER CODE OFF-STATE VOLTAGE PEAK VOLTAGE A mA mA V V 1N3879(R) 50 75 1N3880(R) 100 150 (1) (1) (1) 1N3881(R) - 200 250 15 1.0 3.0 1N3882(R) 300 350 1N3883(R) 400 450 1N3889(R) 50 75 1N3890(R) 100 150 (1) (1) (1) 1N3891(R) - 200 250 25 3.0 5.0 1N3892(R) 300 350 1N3893(R) 400 450 Note (1) JEDEC registered values FORWARD CONDUCTION 1N3879(R) 1N3889(R) PARAMETER SYMBOL TEST CONDITIONS UNITS TO 1N3883(R) TO 1N3893(R) (1) (1) 6 12 A Maximum average forward current 180 conduction, half sine wave I F(AV) at case temperature DC 100 100 C Maximum RMS current I 9.5 19 F(RMS) t = 10 ms 85 170 No voltage reapplied t = 8.3 ms 90 180 A Maximum peak, one-cycle I FSM non-repetitive forward current t = 10 ms 72 145 100 % V RRM Sinusoidal reapplied (1) (1) t = 8.3 ms 75 150 half wave, initial t = 10 ms 36 145 No voltage T = 150 C J reapplied t = 8.3 ms 33 130 2 2 2 Maximum I t for fusing I t A s t = 10 ms 26 103 100 % V RRM reapplied t = 8.3 ms 23 94 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 363 1452 A s (1) (1) T = 25 C I = Rated I (DC) 1.4 1.4 J F F(AV) Maximum forward voltage drop V V FM (1) (1) T = 100 C I = x rated I 1.5 1.5 C FM F(AV) Note (1) JEDEC registered values Revision: 28-May-15 Document Number: 93144 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000