VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Low profile, axial leaded outline High frequency operation Cathode Anode Very low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified for commercial level Package DO-204AL (DO-41) Halogen-free according to IEC 61249-2-21 definition I 1 A F(AV) (-M3 only) V 20 V R V at I See Electrical table DESCRIPTION F F I max. 10 mA at 125 C RM The VS-1N5817... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate T max. 150 C J leakage. Typical applications are in switching power Diode variation Single die supplies, converters, freewheeling diodes, and reverse E See Electrical table AS battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 20 V RRM I t = 5 s sine 240 A FSM p V 1 Apk, T = 25 C 0.45 V F J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-1N5817 VS-1N5817-M3 UNITS Maximum DC reverse voltage V R 20 20 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 138 C, rectangular waveform 1.0 F(AV) L 5 s sine or 3 s rect. pulse Following any rated load 240 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current at T = 25 C J 10 ms sine or 6 ms rect. pulse V applied 40 RRM Revision: 21-Sep-11 Document Number: 93255 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 1 A 0.42 0.45 (1) Maximum forward voltage drop V T = 25 C V FM J 3 A 0.50 0.75 T = 25 C 0.012 1.0 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 100 C 2.0 10 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 110 - pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 - nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 65 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 32 thJL junction to lead Lead length = 1/8 C/W Maximum thermal resistance, DC operation R 100 thJA junction to ambient Without cooling fin 0.33 g Approximate weight 0.012 oz. Marking device Case style DO-204AL (DO-41) 1N5817 Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 21-Sep-11 Document Number: 93255 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000