VS-240U(R).. Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 320 A FEATURES Diffused diode Wide current range High voltage ratings up to 1200 V High surge current capabilities Stud cathode and stud anode version Hermetic metal case Designed and qualified for industrial level DO-9 (DO-205AB) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Welders Power supplies PRIMARY CHARACTERISTICS Machine tool controls I 320 A F(AV) High power drives Package DO-9 (DO-205AB) Medium traction applications Circuit configuration Single Battery charges Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 320 A I F(AV) T 100 C C I 500 A F(RMS) 50 Hz 4500 I A FSM 60 Hz 4700 50 Hz 101 2 2 I t kA s 60 Hz 92 V Range 600 to 1200 V RRM T -40 to +180 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 60 600 700 80 800 900 VS-240U(R).. 15 100 1000 1100 120 1200 1300 Revision: 11-Jan-18 Document Number: 93504 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-240U(R).. Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 320 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 100 C Maximum RMS forward current I DC at 80 C case temperature 500 F(RMS) t = 10 ms 4500 No voltage reapplied t = 8.3 ms 4700 A Maximum peak, one cycle forward, I FSM non-repetitive surge current t = 10 ms 3800 100 % V RRM reapplied t = 8.3 ms 4000 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 101 No voltage reapplied t = 8.3 ms 92 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 72 100 % V RRM reapplied t = 8.3 ms 66 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1010 kA s Slope resistance r 0.6 m f T = T maximum J J Threshold voltage V 0.83 F(T0) V Maximum forward voltage drop V I = 750 A, T = 25 C, t = 10 ms sinusoidal wave 1.33 FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction operating T , T -40 to 180 C J Stg and storage temperature range Maximum thermal resistance, R DC operation 0.18 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.08 thCS case to heatsink Not lubricated threads 37 (330) N m Maximum allowable mounting torque +0 -20 % (lbf in) Lubricated threads 28 (250) Approximate weight 250 g Case style See dimensions - link at the end of datasheet DO-9 (DO-205AB) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.019 0.015 120 0.023 0.025 90 0.030 0.034 T = T maximum K/W J J 60 0.045 0.047 30 0.076 0.076 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93504 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000