VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors Schottky High Performance Rectifier Gen 3, D-61 Package, 2 x 40 A FEATURES VS-82CNQ030APbF Base 150 C T operation J common Available Dual center tap module cathode Available Very low forward voltage drop High frequency operation 12 3 Anode Common Anode High power discrete 1 2 cathode D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-82CNQ030ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mould low profile, small footprint, high current package 12 3 Anode Common Anode Through-hole versions are currently available for use in 1 2 cathode lead (Pb)-free applications (PbF suffix) D-61-8-SM Designed and qualified for industrial level Material categorization: for definitions of compliance VS-82CNQ030ASLPbF Base please see www.vishay.com/doc 99912 common cathode Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For 13 example, parts with lead (Pb) terminations are not RoHS-compliant. Anode Anode Please see the information/tables in this datasheet for details. 1 2 D-61-8-SL DESCRIPTION The center tap Schottky rectifier module series has been PRODUCT SUMMARY optimized for very low forward voltage drop, with moderate Package D-61 leakage. The proprietary barrier technology allows for I 2 x 40 A F(AV) reliable operation up to 150 C junction temperature. Typical V 30 V R applications are in switching power supplies, converters, V at I 0.47 F F freewheeling diodes, and reverse battery protection. I max. 280 mA at 125 C RM T max. 150 C J Diode variation Common cathode E 36 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 80 A F(AV) V 30 V RRM I t = 5 s sine 5100 A FSM p V 40 A , T = 125 C (per leg) 0.37 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-82CNQ030APbF UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM Revision: 05-Aug-14 Document Number: 94258 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 80 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 5100 non-repetitive surge current per leg I load condition and with FSM See fig. 7 rated V applied 10 ms sine or 6 ms rect. pulse 880 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 8 A, L = 1.12 mH 36 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 8A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 40 A 0.47 T = 25 C J 80 A 0.55 Maximum forward voltage drop per leg (1) V V FM See fig. 1 40 A 0.37 T = 125 C J 80 A 0.47 T = 25 C 5 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 280 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 3700 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range per leg DC operation (see fig. 4) 0.85 Maximum thermal resistance, R thJC junction to case per package DC operation 0.42 C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 40 (35) kgf cm Mounting torque (lbf in) maximum 58 (50) Case style D-61 82CNQ030A Marking device Case style D-61-8-SM 82CNQ030ASM Case style D-61-8-SL 82CNQ030ASL Revision: 05-Aug-14 Document Number: 94258 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000