X-On Electronics has gained recognition as a prominent supplier of VS-82CNQ030APBF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-82CNQ030APBF Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-82CNQ030APBF Vishay

VS-82CNQ030APBF electronic component of Vishay
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Part No.VS-82CNQ030APBF
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 80 Amp 30 Volt Common Cathode
Datasheet: VS-82CNQ030APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 200
Multiples : 200
200 : USD 12.6544
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 18.8014
10 : USD 17.09
25 : USD 15.8125
50 : USD 14.9567
100 : USD 14.5229
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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We are delighted to provide the VS-82CNQ030APBF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-82CNQ030APBF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors Schottky High Performance Rectifier Gen 3, D-61 Package, 2 x 40 A FEATURES VS-82CNQ030APbF Base 150 C T operation J common Available Dual center tap module cathode Available Very low forward voltage drop High frequency operation 12 3 Anode Common Anode High power discrete 1 2 cathode D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-82CNQ030ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mould low profile, small footprint, high current package 12 3 Anode Common Anode Through-hole versions are currently available for use in 1 2 cathode lead (Pb)-free applications (PbF suffix) D-61-8-SM Designed and qualified for industrial level Material categorization: for definitions of compliance VS-82CNQ030ASLPbF Base please see www.vishay.com/doc 99912 common cathode Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For 13 example, parts with lead (Pb) terminations are not RoHS-compliant. Anode Anode Please see the information/tables in this datasheet for details. 1 2 D-61-8-SL DESCRIPTION The center tap Schottky rectifier module series has been PRODUCT SUMMARY optimized for very low forward voltage drop, with moderate Package D-61 leakage. The proprietary barrier technology allows for I 2 x 40 A F(AV) reliable operation up to 150 C junction temperature. Typical V 30 V R applications are in switching power supplies, converters, V at I 0.47 F F freewheeling diodes, and reverse battery protection. I max. 280 mA at 125 C RM T max. 150 C J Diode variation Common cathode E 36 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 80 A F(AV) V 30 V RRM I t = 5 s sine 5100 A FSM p V 40 A , T = 125 C (per leg) 0.37 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-82CNQ030APbF UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM Revision: 05-Aug-14 Document Number: 94258 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-82CNQ030APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 80 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 5100 non-repetitive surge current per leg I load condition and with FSM See fig. 7 rated V applied 10 ms sine or 6 ms rect. pulse 880 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 8 A, L = 1.12 mH 36 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 8A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 40 A 0.47 T = 25 C J 80 A 0.55 Maximum forward voltage drop per leg (1) V V FM See fig. 1 40 A 0.37 T = 125 C J 80 A 0.47 T = 25 C 5 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 280 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 3700 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range per leg DC operation (see fig. 4) 0.85 Maximum thermal resistance, R thJC junction to case per package DC operation 0.42 C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 40 (35) kgf cm Mounting torque (lbf in) maximum 58 (50) Case style D-61 82CNQ030A Marking device Case style D-61-8-SM 82CNQ030ASM Case style D-61-8-SL 82CNQ030ASL Revision: 05-Aug-14 Document Number: 94258 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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