VS-40HFL, VS-70HFL, VS-85HFL Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode and stud anode versions Types up to 100 V RRM Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-5 (DO-203AB) TYPICAL APPLICATIONS DC power supplies Inverters PRIMARY CHARACTERISTICS Converters I 40 A, 70 A, 85 A F(AV) Choppers Package DO-5 (DO-203AB) Ultrasonic systems Circuit Configuration Single Freewheeling diodes MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 40HFL 70HFL 85HFL UNITS 40 70 85 A I F(AV) T maximum 85 85 85 C C 50 Hz 400 700 1100 I A FSM 60 Hz 420 730 1151 50 Hz 800 2450 6050 2 2 I t A s 60 Hz 730 2240 5523 2 2 I t 11 300 34 650 85 560 I s V Range 100 to 1000 100 to 1000 100 to 1000 V RRM See Recovery See Recovery See Recovery t ns rr Characteristics table Characteristics table Characteristics table T Range -40 to +125 -40 to +125 -40 to +125 C J Revision: 11-Jan-18 Document Number: 93150 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40HFL, VS-70HFL, VS-85HFL Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM PEAK I , MAXIMUM PEAK REVERSE RRM RSM FM PEAK REPETITIVE NON-REPETITIVE CURRENT AT RATED V RRM (1) TYPE NUMBER REVERSE VOLTAGE REVERSE VOLTAGE mA T = - 40 C TO 125 C T = 25 C TO 125 C J J T = 25 C T = 125 C J J V V VS-40HFL10S02, VS-40HFL10S05 100 150 VS-40HFL20S02, VS-40HFL20S05 200 300 VS-40HFL40S02, VS-40HFL40S05 400 500 0.1 10 VS-40HFL60S02, VS-40HFL60S05 600 700 VS-40HFL80S05 800 900 VS-40HFL100S05 1000 1100 VS-70HFL10S02, VS-70HFL10S05 100 150 VS-70HFL20S02, VS-70HFL20S05 200 300 VS-70HFL40S02, VS-70HFL40S05 400 500 0.1 15 VS-70HFL60S02, VS-70HFL60S05 600 700 VS-70HFL80S05 800 900 VS-70HFL100S05 1000 1100 VS-85HFL10S02, VS-85HFL10S05 100 150 VS-85HFL20S02, VS-85HFL20S05 200 300 VS-85HFL40S02, VS-85HFL40S05 400 500 0.1 20 VS-85HFL60S02, VS-85HFL60S05 600 700 VS-85HFL80S05 800 900 VS-85HFL100S05 1000 1100 Note (1) Types listed are cathode case, for anode case add R to code, i.e. 40HFLR20S02, 85HFLR100S05 etc. FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 40HFL 70HFL 85HFL UNITS 40 70 85 A Maximum average forward current I 180 conduction, half sine wave F(AV) at maximum case temperature 75 C Maximum RMS forward current I 63 110 134 A F(RMS) Maximum peak repetitive forward current I Sinusoidal half wave, 30 conduction 220 380 470 A FRM t = 10 ms Sinusoidal half wave, 100 400 700 1100 % V reapplied, RRM t = 8.3 ms 420 730 1151 initial T = T maximum Maximum peak, one-cycle J J I A FSM non-repetitive forward current t = 10 ms Sinusoidal half wave, 475 830 1308 no voltage reapplied, t = 8.3 ms 500 870 1369 initial T = T maximum J J t = 10 ms 800 2450 6050 100 % V reapplied, RRM initial T = T maximum t = 8.3 ms J J 730 2240 5523 2 2 2 Maximum I t for fusing I t A s t = 10 ms 1130 3460 8556 No voltage reapplied, initial T = T maximum t = 8.3 ms J J 1030 3160 7810 2 (1) 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 650 85 560 A s Maximum value of threshold voltage V 1.081 1.085 1.128 V F(TO) T = 125 C J Maximum value of forward slope resistance r 6.33 3.40 2.11 m F Maximum forward voltage drop V T = 25 C, I = x I 1.95 1.85 1.75 V FM J FM F(AV) Note (1) 2 2 I t for time t = I t x t x x Revision: 11-Jan-18 Document Number: 93150 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000