VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 Anode 2 Anode strength and moisture resistance 13Common 3 Guard ring for enhanced ruggedness and long term 3L TO-220AB cathode reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 7.5 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 45 V R DESCRIPTION V at I 0.57 V F F The VS-MBR15...CT... center tap Schottky rectifier has been I max. 15 mA at 125 C RM optimized for low reverse leakage at high temperature. The T max. 150 C J proprietary barrier technology allows for reliable operation E 7 mJ AS up to 150 C junction temperature. Typical applications are Package 3L TO-220AB in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 15 A F(AV) V 35/45 V RRM I t = 5 s sine 690 A FSM p V 7.5 A , T = 125 C 0.57 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBR1535CT-M3 VS-MBR1545CT-M3UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 7.5 Maximum average forward I T = 131 C, rated V F(AV) C R current per device 15 Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated 690 Maximum peak one cycle non-repetitive V applied RRM I FSM surge Surge applied at rated load condition half wave 150 single phase 60 Hz Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 3.5 mH 7 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 18-Aug-17 Document Number: 96281 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR1535CT-M3, VS-MBR1545CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 7.5 A 0.57 V FM T = 125 C J 15 A 0.72 T = 25 C 0.1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 400 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 3.0 thJC junction to case per leg Typical thermal resistance, R Mounting surface, smooth and greased 0.50 C/W thCS case to heatsink Maximum thermal resistance, R DC operation 60 thJA junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBR1535CT Marking device Case style 3L TO-220AB MBR1545CT Revision: 18-Aug-17 Document Number: 96281 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000