VSMY2850RGX01, VSMY2850GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES VSMY2850RGX01 VSMY2850GX01 Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: = 850 nm p High reliability High radiant power DESCRIPTION Very high radiant intensity TM As part of the SurfLight portfolio, the VSMY2850 series Angle of half intensity: = 10 are infrared, 850 nm emitting diodes based on GaAlAs Suitable for high pulse current operation surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in Terminal configurations: gullwing or reverse gullwing clear, untinted plastic packages (with lens) for surface Package matches with detector VEMD2500X01 series mounting (SMD). Floor life: 4 weeks, MSL 2a, according to J-STD-020 Material categorization: for definitions of compliance APPLICATIONS please see www.vishay.com/doc 99912 Automotive sensors Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR illumination PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMY2850RGX01 125 10 850 10 VSMY2850GX01 125 10 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2850RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2850GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.0, 31-Jul-2018 Document Number: 84898 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2850RGX01, VSMY2850GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 10, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 250 K/W thJA 120 200 180 100 160 140 80 120 60 100 R = 250 K/W thJA 80 R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090 100 T - Ambient Temperature (C) 21890 21891 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.6 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.5 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -50 - pF R J I = 100 mA, t = 20 ms I 70 125 210 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I -1000 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -55 - mW F p e Temperature coefficient of radiant power I = 100 mA TK - -0.12 - %/K F e Angle of half intensity - 10 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30 - nm F Temperature coefficient of I = 30 mA TK -0.25 - nm/K p F p Rise time I = 100 mA, 10 % to 90 % t -10 - ns F r Fall time I = 100 mA, 10 % to 90 % t -10 - ns F f Rev. 1.0, 31-Jul-2018 Document Number: 84898 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F