X-On Electronics has gained recognition as a prominent supplier of VS-P405KW SCR Modules across the USA, India, Europe, Australia, and various other global locations. VS-P405KW SCR Modules are a product manufactured by Vishay. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

VS-P405KW Vishay

VS-P405KW electronic component of Vishay
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See Product Specifications
Part No.VS-P405KW
Manufacturer: Vishay
Category: SCR Modules
Description: SCR Modules 1200 Volt 40 Amp
Datasheet: VS-P405KW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 57.402 ea
Line Total: USD 57.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 57.402
10 : USD 51.6996
30 : USD 47.682
100 : USD 46.8936

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Breakover Current Ibo Max
Current Rating
Off-State Leakage Current Vdrm Idrm
Brand
Circuit Type
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-P405KW from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-P405KW and other electronic components in the SCR Modules category and beyond.

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VS-P400 Series www.vishay.com Vishay Semiconductors Power Modules, Passivated Assembled Circuit Elements, 40 A FEATURES Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V /V RRM DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved PACE-PAK (D-19) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 40 A O The VS-P400 series of integrated power circuits consists of Type Modules - thyristor, standard power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs Package PACE-PAK (D-19) are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 80 C 40 A O 50 Hz 385 I , TSM A I FSM 60 Hz 400 50 Hz 745 2 2 I t A s 60 Hz 680 2 2 I t 7450 A s V Range 400 to 1200 V RRM V 2500 V ISOL T J -40 to +125 C T Stg ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I MAXIMUM RRM REPETITIVE PEAK REVERSE AND NON-REPETITIVE PEAK TYPE NUMBER AT T MAXIMUM J PEAK OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-P401, VS-P421, VS-P431 400 500 VS-P402, VS-P422, VS-P432 600 700 VS-P403, VS-P423, VS-P433 800 900 10 VS-P404, VS-P424, VS-P434 1000 1100 VS-P405, VS-P425, VS-P435 1200 1300 Revision: 27-Jul-2018 Document Number: 93755 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-P400 Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 40 A Maximum DC output current I Full bridge circuits O at case temperature 80 C t = 10 ms 385 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 400 I , TSM non-repetitive on-state or A I FSM t = 10 ms 325 100 % V forward current RRM reapplied t = 8.3 ms 340 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 745 No voltage reapplied t = 8.3 ms 680 2 2 2 Maximum I t for fusing I t A s t = 10 ms 530 100 % V RRM t = 8.3 ms reapplied 480 t = 0.1 ms to 10 ms, no voltage reapplied 2 2 2 Maximum I t for fusing I t 7450 A s 2 2 I t for time tx = I t tx Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.83 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.03 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 9.61 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 7.01 t2 T(AV) J J Maximum on-state voltage drop V I = x I T = 25 C 1.4 V TM TM T(AV) J Maximum forward voltage drop V I = x I T = 25 C 1.4 V FM FM F(AV) J Maximum non-repetitive rate of rise of T = 125 C from 0.67 V J DRM dI/dt 200 A/s turned-on current I = x I , I = 500 mA, t < 0.5 s, t > 6 s TM T(AV) g r p Maximum holding current I 130 H T = 25 C anode supply = 6 V, resistive load mA J Maximum latching current I 250 L BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise of dV/dt T = 125 C, exponential to 0.67 V gate open 200 V/s J DRM off-state voltage Maximum peak reverse and off-state I , RRM T = 125 C, gate open circuit 10 mA J leakage current at V , V I RRM DRM DRM Maximum peak reverse leakage current I T = 25 C 100 A RRM J 50 Hz, circuit to base, all terminals shorted, RMS isolation voltage V 2500 V ISOL T = 25 C, t = 1 s J TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8 GM W Maximum average gate power P 2 G(AV) Maximum peak gate current I 2A GM Maximum peak negative gate voltage -V 10 V GM T = - 40 C 3 J Maximum gate voltage required to trigger V T = 25 C 2 V GT J T = 125 C 1 J Anode supply = 6 V resistive load T = - 40 C 90 J Maximum gate current required to trigger I T = 25 C 60 mA GT J T = 125 C 35 J Maximum gate voltage that will not trigger V 0.2 V GD T = 125 C, rated V applied J DRM Maximum gate current that will not trigger I 2mA GD Revision: 27-Jul-2018 Document Number: 93755 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
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Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
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Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
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Vishay Foil Resistors (Division of Vishay Precision Group)
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Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
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Vishay Precision Group
Vishay Precision Group Foil Resistors
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Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
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VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
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VishayBC Components
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VishayVitramon
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