VS-QA250FA20 www.vishay.com Vishay Semiconductors Insulated Gen 2 Schottky Rectifier Module, 250 A FEATURES Max. T = 175 C J Two fully independent diodes Fully insulated package Trench MOS Barrier Schottky technology Ultra low forward voltage drop Optimized for power conversion: welding and industrial SMPS applications SOT-227 Easy to use and parallel Industry standard outline UL approved file E78996 Designed and qualified for industrial level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I per module at T = 106 C 250 A F(AV) C please see www.vishay.com/doc 99912 V 200 V R V at 200 A, T = 25 C 1.0 V FM C DESCRIPTION Package SOT-227 The VS-QA250FA20 insulated modules integrate two state Two separate diodes, Circuit configuration of the art Trench MOS Schottky technology rectifiers in the parallel pin-out compact, industry standard SOT-227 package. These devices are thus intended for high frequency converters and switching power supplies. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V T = 125 C 1.09 V F J T Range -55 to +175 C J ABSOLUTE MAXIMUM RATINGS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current per module I T = 106 C 250 A F(AV) C Maximum cathode to anode voltage V 200 V R Maximum continuous forward current per diode I T = 95 C 183 F C A Maximum single pulse forward current per diode I T = 175 C, t = 6 ms, square 900 FSM C Maximum power dissipation per diode P T = 95 C 182 W D C Non-repetitive avalanche energy per diode E T = 25 C, I = 19 A, L = 10 mH 1800 mJ AS J AS RMS isolation voltage V Any terminal to case, t = 1 minute 2500 V ISOL Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 10-Sep-2019 Document Number: 95876 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-QA250FA20 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 2 mA 200 - - BR R I = 200 A - 1.0 1.2 V F Forward voltage V FM I = 200 A, T = 125 C - 0.89 1.09 F J V = 200 V - 13 90 A R Reverse leakage current I RM T = 125 C, V = V rated - 14 - mA J R R Junction capacitance C V = 200 V - 380 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -54 - J Reverse recovery time t ns rr T = 125 C - 67 - J I = 50 A F T = 25 C - 6 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 8.4 - J V = 100 V R T = 25 C - 165 - J Reverse recovery charge Q nC rr T = 125 C - 296 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Junction to case, single leg conducting - - 0.44 R thJC Junction to case, both leg conducting - - 0.22 C/W Case to heatsink R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 95876 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000