X-On Electronics has gained recognition as a prominent supplier of VS-RA160FA120 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. VS-RA160FA120 Discrete Semiconductor Modules are a product manufactured by Vishay. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

VS-RA160FA120 Vishay

VS-RA160FA120 electronic component of Vishay
VS-RA160FA120 Vishay
VS-RA160FA120 Discrete Semiconductor Modules
VS-RA160FA120  Semiconductors

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Part No. VS-RA160FA120
Manufacturer: Vishay
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V, 160A, Pwr Mod Std Recvry Rectifier
Datasheet: VS-RA160FA120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 24.702 ea
Line Total: USD 24.7 
Availability - 87
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 24.702
10 : USD 18.095
100 : USD 16.027
480 : USD 16.016

   
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We are delighted to provide the VS-RA160FA120 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-RA160FA120 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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VS-RA160FA120 www.vishay.com Vishay Semiconductors SOT-227 Power Module Insulated Standard Recovery Rectifier, 160 A FEATURES Two fully independent diodes Fully insulated package High voltage rectifiers optimized for very low forward voltage drop Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SOT-227 DESCRIPTION / APPLICATIONS These devices are intended for use in main rectification. Single or three phase bridge. PRIMARY CHARACTERISTICS I per module 160 A, T = 101 C F(AV) C V typical at 100 A 1.16 V FM Type Modules - diode, high voltage Package SOT-227 Circuit configuration Two separate diodes, parallel pin-out MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I 90 C 91 F(AV) I 138 F(RMS) A 50 Hz 940 I FSM 60 Hz 985 50 Hz 4420 2 2 I t A s 60 Hz 4015 2 2 I t 44 180 A s V 1200 V RRM T -55 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I TYPICAL RRM, RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C CODE V V mA VS-RA160FA120 120 1200 1300 1.0 Revision: 18-Nov-2020 Document Number: 96330 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-RA160FA120 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case I 180 conduction, half sine wave, 90 C 91 A F(AV) temperature per leg Maximum RMS forward current per leg I DC at 101 C case temperature 138 F(RMS) t = 10 ms 940 No voltage reapplied Maximum peak, one-cycle forward, t = 8.3 ms 985 A I FSM non-repetitive surge current per leg t = 10 ms 790 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 825 initial t = 10 ms 4420 No voltage T = T maximum J J reapplied t = 8.3 ms 4015 2 2 2 Maximum I t for fusing per leg I t A s t = 10 ms 3125 100 % V RRM reapplied t = 8.3 ms 2840 2 2 2 Maximum I t for fusing per leg I t t = 0.1 ms to 10 ms, no voltage reapplied 44 180 A s Low level of threshold voltage per leg V 0.80 V F(TO)1 (16.7 % x x I ) < I < x I , T = T maximum F(AV) F(AV) J J Low level value of forward slope resistance r 4.32 m f1 High level of threshold voltage per leg V 0.93 V F(TO)2 (I > x I ), T = T maximum F(AV) J J High level value of forward slope resistance r 4.14 m f2 I = 100 A, T = 25 C 1.27 FM J Maximum forward voltage drop per leg V V FM I = 100 A, T = 150 C 1.22 FM J BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C 150 A Maximum peak reverse leakage current J I RRM per leg T = 150 C 1.5 mA J RMS insulation voltage V T = 25 C, any terminal to case, t = 1 minute 2500 V INS J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX.UNITS per leg - - 0.26 Thermal resistance, R thJC junction to case per module - - 0.13 C/W Thermal resistance, case to heatsink per module R -0.1 - thCS Weight -30 - g Mounting torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque to heatsink - - 1.8 (15.9) Nm (lbf. in) Case style SOT-227 R CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS DEVICE 180 120 90 60 30 180 120 90 60 30 C/W VS-RA160FA120 0.109 0.122 0.149 0.213 0.355 0.069 0.119 0.159 0.223 0.358 Revision: 18-Nov-2020 Document Number: 96330 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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