VS-VSKDU162/12PbF www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules) FEATURES Electrically isolated: DBC base plate Standard JEDEC package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Case style INT-A-PAK INT-A-PAK Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 1200 V R V (typical) 2.5 V F t (typical) 150 ns rr I at T 110 A at 100 C F(DC) C Package INT-A-PAK Circuit configuration Two diodes doubler circuit ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage V 1200 V R T = 25 C 205 C Continuous forward current I F T = 100 C 110 A C Single pulse forward current I Limited by junction temperature 800 FSM T = 25 C 695 C Maximum power dissipation P W D T = 100 C 280 C RMS isolation voltage V 50 Hz, circuit to base, all terminal shorted, t = 1 s 3500 V ISOL Operating junction and storage T , T -40 to +150 C J Stg temperature range ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage V I = 100 A - 2.5 3.2 F Maximum forward voltage V FM I = 160 A - 2.9 3.9 F Maximum reverse leakage current I T = 150 C, V = 1200 V - 18 30 mA RM J R Revision: 09-Nov-2020 Document Number: 94512 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-VSKDU162/12PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t T = 25 C - 150 200 ns rr J I = 160 A F Reverse recovery current I T = 25 C - 20 22 A RRM J dI /dt = 200 A/s F Reverse recovery charge Q T = 25 C - 2000 2400 nC rr J V = 200 V R Peak rate of recovery current dI /dt T = 25 C - - 300 A/s (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Junction operating and T , T -40 to +150 C J Stg storage temperature range Maximum internal thermal resistance, R DC operation 0.18 thJC junction to case per leg C/W Typical thermal resistance, R Mounting surface flat, smooth and greased 0.05 thCS case to heatsink per module A mounting compound is recommended and the to heatsink Mounting torque 10 % torque should be rechecked after a period of 3 hours 4 to 6 Nm busbar to allow for the spread of the compound. 200 g Approximate weight 7.1 oz. Case style INT-A-PAK 100 1000 150 C 10 100 1 0.1 T = 150 C J 10 T = 25 C J 0.01 25 C 0.001 1 0 1 2 3 4 5 6 7 8 200 400 600 800 1000 1200 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Nov-2020 Document Number: 94512 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R