REV B www.wantcominc.com 1 0.1 2.0 GHz LOW NOISE AMPLIFIER WHM0110AE WHM0110AE LNA is a low noise figure, wideband, and high linearity SMT packaged amplifiers. The amplifier offers typical noise figure of 0.65 dB and output IP of 34 dBm at the frequency range from 0.1 GHz 3 to 1.1 GHz and extendable to 2.0 GHz of VHF, UHF, Cellular, GSM, GPS, DCS, PCS, and 3G bands. WHM0110AE LNA is most suitable for cellular base stations, wireless data communications, tower top receiver amplifiers, last-mile wireless communication systems, and wireless measurement applications. Key Features: Impedance: 50 Ohm 2 MTBF: >2,500,000 hrs (300 Years) LGA (land grid array) package: 6-pin Low Noise: 0.65 dB Output IP : 34 dBm 3 Gain: 20.0 dB P: 17.0 dBm 1dB Single power supply: 60 mA +5V Frequency Range: 0.1 ~ 1.1 GHz Extendable to 2.0 GHz Operating Temperature: -40 ~ +85 C Return Losses: 16 dB Typical Small size: 0.25 x 0.25 x 0.060 (6.35 mm x 6.35 mm x 1.52 mm) Built-in Functions: DC blocks at input and output, temperature compensation circuits, and auto DC biases. Specifications: a) Table 1 Summary of the electrical specifications WHM0110AE at room temperature Index Testing Item Symbol Test Constraints Nom (RT) Min Max Unit 1 Gain S 0.1 1.1 GHz 17.5 23 dB 21 0.1 GHz Bandwidth 2 Gain Variation G +/- 0.25 +/- 0.4 dB 0.1 1.1 GHz 3 Input Return Loss S 20 18 dB 11 0.1 1.1 GHz 4 Output Return Loss S 18 16 dB 22 0.1 1.1 GHz Reverse Isolation S 22 20 dB 5 12 0.1 1.1 GHz 6 Noise figure NF 0.65 0.80 dB 0.1 1.1 GHz 7 Output Power 1dB P 17 16 dBm 1dB compression Point 8 Output-Third-Order IP Two-Tone, P +0 dBm 34 32 dBm 3 out Interception point each, 1 MHz separation 10 Current Consumption I V = +5 V 60 55 70 mA dd dd 11 Power Supply Voltage V +5 +4.7 +5.3 V dd o 12 Thermal Resistance R Junction to case 215 C/W th,c o 13 Operating Temperature T -40 +85 C o 0.1 2.0 GHz 14 Maximum Average RF Input P 10 dBm IN, MAX Power 1 Specifications are subject to change without notice. o 2 MTBF: Mean Time Between Failure, Per TR-NWT-000332, ISSUE 3, SEPTEMBER, 1990, T=40 C 1REV B www.wantcominc.com b) Passband Frequency Response As shown in Figure 1, the typical gain of the WHM0110AE is from 18.0 dB to 22.5 dB across 0.1 GHz to 1.1 GHz. The typical input and output return losses are 20 dB and 18 dB across the frequency of 0.1 to 1.1 GHz. The return losses and gain are usable up to 2.0 GHz. Figure 2 shows the full band performance up to 2.0 GHz. Figure 3 shows the measured P and IP of the WHM0110AE. The typical P and IP are 17 dBm and 34 1dB 3 1dB 3 dBm in the frequency range of 0.10 GHz to 2.0 GHz, respectively. Figure 4 illustrates the measured noise figure performance at full temperature. The measured results include the test fixture loss of approximately 0.05 dB to 0.10 dB depending on the frequency. The noise figure is 0.60 dB to 0.75 dB across the frequency range of 0.1 to 1.1 GHz at room temperature. The noise figure is below 1.0 dB at 2.0 0 0 GHz. At 85 C, WHM0110AE only has 0.35 dB noise increases. At 40 C, WHM0110AE offers approximately 0.25 dB less noise figure than that at room temperature. Figure 5 demonstrates the stability factor k of the amplifier. The k values are slightly below 1 in some frequency ranges of 2.7 GHz to 3.4 GHz. Figure 6 plots the input and output stability circles. As shows in Figure 6, the red circles are the input stability circles and there are some small potential unstable areas falling into the unit Smith Chart. The high inductance to open load would cause the unstable to the amplifier. The blue circles are the output stability circles and there are some small potential unstable areas falling into the unit Smith Chart. The high capacitance to open load would cause the unstable to the amplifier. Figure 7 is the block diagram of internal circuit of WHM0110AE. It is one stage amplifier with the DC block capacitors at the input and output RF ports. All the RF matching networks, DC bias circuitries, and temperature compensation circuits are built in. Figure 8 demonstrates the application schematic diagram of WHM0110AE. It requires two (2) external decoupling capacitors of 0.01 uF to build a LNA with WHM0110AE. The +5V DC can be applied either at Pin 3 or Pin 5 depending on the availability of the +5.0V source location. No DC block capacitor is required for both input and output RF ports. For +5V line trace length being longer than 6 inch without a decoupling capacitor, an additional 0.01 ~ 0.1 uF de-coupling capacitor with minimum rating voltage of 10V may be needed across the +5V line to ground. The 0 0 capacitor must be rated in the temperature range of -40 C to 85 C to ensure the entire circuit working in the specified temperature range. Figure 9 shows the mechanical outline and recommended motherboard layout of WHM0110AE. Plenty of ground vias on the motherboard are essential for the RF grounding. The width of the 50-Ohm lines at the input and output RF ports may be different for different property of the substrate. WHM0110AE Performance 25 C WHM0110AE Performance 25 C 25 25 20 20 15 15 10 10 S11 S21 S12 S22 S11 S21 S12 S22 5 5 0 0 -5 -5 -10 -10 -15 -15 -20 -20 Freq (GHz) -25 Freq (GHz) -25 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FIG. 1 Typical small signal performance. FIG. 2 Small signal performance up to 2 GHz. 2 Sij (dB) Sij (dB)