BTA225B-800B,118 WeEn Semiconductor

BTA225B-800B 3Q Hi-Com Triac Rev.02 - 28 April 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High blocking voltage capability High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Less sensitive gate for very high noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications Heating controls High power motor control High power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I RMS on-state current full sine wave T 91 C - - 25 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 190 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C t = 16.7 ms - - 209 A j(init) p T junction temperature - - 125 C j Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 18 50 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA225B-800B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 21 50 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 34 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 31 60 mA H D j V on-state voltage I = 30 A T = 25 C Fig. 10 - 1,3 1.55 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 4000 - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 25 A - 44 - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s gate open circuit com Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 2 T2 main terminal 2 T2 T1 G 3 G gate sym051 mb T2 mounting base main terminal 2 2 3 1 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA225B-800B TO263 BTA225B-800B,118 Reel 800 TO263E 26-May-2017 BTA225B-800B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 28 April 2019 2 / 13