X-On Electronics has gained recognition as a prominent supplier of W29N01HVSINF TR NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVSINF TR NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HVSINF TR Winbond

Name: W29N01HVSINF TR
Brand: Winbond
SKU: W29N01HVSINFTR_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N01HVSINF TR electronic component of Winbond

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Part No.	W29N01HVSINF TR
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet:	W29N01HVSINF TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1500: USD 2.31 ea
Line Total: USD 3465

Availability - 0

MOQ: 1500 Multiples: 1500
Pack Size: 1500

W29N01HVSINF TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1500 Multiples : 1500	1500 : USD 2.31 3000 : USD 2.299

We are delighted to provide the W29N01HVSINF TR from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HVSINF TR and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash
Mounting Style SMD/SMT SMD/SMT
Package / Case TSOP - 48 TSOP - 48
Series W29N01HV W29N01HV
Memory Size 1 Gbit 1 Gbit
Interface Type Parallel Parallel
Organisation 128 M x 8 128 M x 8
Data Bus Width 8 bit 8 bit
Supply Voltage - Min 2.7 V 2.7 V
Supply Voltage - Max 3.6 V 3.6 V
Supply Current - Max 35 mA 35 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 85 C + 85 C
Packaging Reel Reel