X-On Electronics has gained recognition as a prominent supplier of W29N01HZSINA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HZSINA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HZSINA Winbond

Name: W29N01HZSINA
Brand: Winbond
SKU: W29N01HZSINA_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N01HZSINA electronic component of Winbond

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Part No.	W29N01HZSINA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 1G-bit NAND flash, 1.8V, 1-bit ECC, 3V, x8
Datasheet:	W29N01HZSINA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.15 ea
Line Total: USD 4.15

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

W29N01HZSINA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1 Multiples : 1	1 : USD 4.15 10 : USD 3.197 96 : USD 3.003 576 : USD 2.97 1056 : USD 2.893 2592 : USD 2.805 5088 : USD 2.728 10080 : USD 2.695

We are delighted to provide the W29N01HZSINA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HZSINA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY th Release Date: January, 11 , 2018 1 Revision C W29N01HZ/W Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48 pin TSOP1 (x8) ...................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 48 ball VFBGA (x16) ................................................................................... 9 3.4 Pin assignment 63 ball VFBGA (x8) ................................................................................... 10 3.5 Pin assignment 63 ball VFBGA (x16) ................................................................................. 11 3.6 Pin Descriptions .................................................................................................................. 12 4. PIN DESCRITPIONS ...................................................................................................................... 13 4.1 Chip Enable ( CE) .............................................................................................................. 13 4.2 Write Enable ( WE) ............................................................................................................ 13 4.3 Read Enable ( RE) ............................................................................................................ 13 4.4 Address Latch Enable (ALE) .............................................................................................. 13 4.5 Command Latch Enable (CLE) .......................................................................................... 13 4.6 Write Protect ( WP) ............................................................................................................ 13 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 13 4.8 Input and Output (I/Ox) ....................................................................................................... 13 5. BLOCK DIAGRAM .......................................................................................................................... 14 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 15 6.1 Array Organization (x8) ...................................................................................................... 15 6.2 Array Organization (x16) .................................................................................................... 16 7. MODE SELECTION TABLE ........................................................................................................... 17 8. COMMAND TABLE......................................................................................................................... 18 9. DEVICE OPERATIONS .................................................................................................................. 19 9.1 READ operation .................................................................................................................. 19 9.1.1 PAGE READ (00h-30h)......................................................................................................... 19 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 20 9.1.3 READ ID (90h) ...................................................................................................................... 20 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 21 9.1.5 READ STATUS (70h)............................................................................................................ 23 9.2 PROGRAM operation ......................................................................................................... 25 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 25 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 25 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 26 9.3 COPY BACK operation....................................................................................................... 27 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 27 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 27 9.4 BLOCK ERASE operation .................................................................................................. 29 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 29 9.5 RESET operation ................................................................................................................ 30 9.5.1 RESET (FFh) ........................................................................................................................ 30 9.6 WRITE PROTECT .............................................................................................................. 31 th Release Date: January, 11 , 2018 2 Revision C

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash
Mounting Style SMD/SMT SMD/SMT
Package / Case TSOP - 48 TSOP - 48
Series W29N01HZ W29N01HZ
Memory Size 1 Gbit 1 Gbit
Interface Type Parallel Parallel
Organisation 128 M x 8 128 M x 8
Data Bus Width 8 bit 8 bit
Supply Voltage - Min 1.7 V 1.7 V
Supply Voltage - Max 1.95 V 1.95 V
Supply Current - Max 25 mA 25 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 85 C + 85 C
Hts Code 8542320051 8542320051