X-On Electronics has gained recognition as a prominent supplier of FH8205 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FH8205 MOSFETs are a product manufactured by Xinfeihong. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FH8205 Xinfeihong

FH8205 electronic component of Xinfeihong
FH8205 Xinfeihong
FH8205 MOSFETs
FH8205  Semiconductors

Images are for reference only
See Product Specifications
Part No. FH8205
Manufacturer: Xinfeihong
Category: MOSFETs
Description: SOT-23-6 MOSFETs ROHS
Datasheet: FH8205 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0404 ea
Line Total: USD 0.4 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 10
Multiples : 10
10 : USD 0.0404
100 : USD 0.0325
300 : USD 0.0285
3000 : USD 0.0246
6000 : USD 0.0223
9000 : USD 0.021

   
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We are delighted to provide the FH8205 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FH8205 and other electronic components in the MOSFETs category and beyond.

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The FH8205 with SOT-23-6 MOSFETs ROHS is a small-signal field effect transistor (FET) manufactured by Xinfeihong. It features an insulated gate bipolar transistor (IGBT) structure and utilizes n-channel enhancement-mode technology. With a drain current of 0.9A and a gate-source voltage of -20V, it is suitable for use in a variety of digital, analog, and power management circuits. This component is RoHS-compliant, offering safe and reliable operation. It also features a low on-resistance of 1.8O, allowing for lower power consumption and higher efficiency levels. Additionally, it has faster switching speed and lower EMI performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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