X-On Electronics has gained recognition as a prominent supplier of FH8712BG2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FH8712BG2 MOSFETs are a product manufactured by Xinfeihong. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FH8712BG2 Xinfeihong

FH8712BG2 electronic component of Xinfeihong
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See Product Specifications
Part No.FH8712BG2
Manufacturer: Xinfeihong
Category: MOSFETs
Description: TDFN-6-EP(2x3) MOSFETs ROHS
Datasheet: FH8712BG2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.138 ea
Line Total: USD 0.69 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 5
Multiples : 5
5 : USD 0.138
50 : USD 0.1118
150 : USD 0.0989
500 : USD 0.0868
3000 : USD 0.0791
6000 : USD 0.0752

   
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We are delighted to provide the FH8712BG2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FH8712BG2 and other electronic components in the MOSFETs category and beyond.

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The FH8712BG2 MOSFET manufactured by Xinfeihong is a TDFN-6-EP(2x3) device that is compliant with the RoHS Directive. It is a low-threshold single-gate enhancement-mode N-channel MOSFET with a breakdown voltage (BVdss) of 8V, a maximum drain current (I_D) of 12A, an on-resistance (R_DSon) of 0.009 ohms, and a maximum drain-source voltage (V_DSS) of 30V. The built-in gate-charge (Q_g) is 5.5nC. The package includes an integrated Zener diode between the gate and source for usage in rugged high-side switching applications. The device is suitable for automotive and telecommunication systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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