About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGB4045DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 1.404
Multiples of: 1

Single600 V2 V+/- 20 V12 A 77 W TO - 220 - 3TubeSiThrough Hole77 W- 55 C  
IRGP4068DPBF


IGBT Transistors 600V UltraFast Trnch w/Ultra-Low VF Diode
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USD 1.4184
Multiples of: 1

Single600 V2.14 V+/- 20 V96 A 330 W TO - 247TubeSiThrough Hole330 W- 55 C  
IRGSL6B60KDPBF


IGBT Transistors 600V UltraFast 10-30kHz
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USD 1.4254
Multiples of: 1

Single600 V2 V+/- 20 V13 A100 nA90 W TO - 262TubeSiThrough Hole90 W- 55 C+ 150 CRc
IRGS14C40LPBF


International Rectifier IGBT Transistors 430V LOW-VCEON DISCRETE IGBT
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USD 1.43
Multiples of: 1

Single430 V1.4 V10 V20 A 125 W D - PAK - 3TubeSiSmd/Smt125 W- 40 C+ 150 C 
IRGB6B60KDPBF


IGBT Transistors 600V UltraFast 10-30kHz
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Infineon Availability : 0
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USD 1.4474
Multiples of: 50

Single600 V2 V+/- 20 V13 A100 nA90 W TO - 220 - 3TubeSiThrough Hole90 W- 55 C+ 150 CRc
IRG4BC15UDPBF


IGBT Transistors 600V UltraFast 8-60kHz
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Infineon Availability : 0
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USD 1.45
Multiples of: 1

Single600 V1.95 V+/- 20 V11 A 49 W TO - 220 - 3TubeSiThrough Hole49 W- 55 C  
IRGSL10B60KDPBF


Transistor: IGBT; 600V; 22A; 104W; TO262
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Infineon Availability : 0
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USD 1.4504
Multiples of: 1

Single600 V2.2 V+/- 20 V22 A 104 W TO - 262TubeSiThrough Hole104 W- 55 C  
IGA03N120H2


IGBT Transistors HIGH SPEED TECH 1200V 3A
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USD 1.4594
Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3 FPTubeSiThrough Hole - 40 C+ 150 CIga03n120
IRG4BC20KDPBF


Transistor: IGBT; 600V; 16A; 60W; TO220AB
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USD 1.462
Multiples of: 1

Single600 V2.8 V+/- 20 V16 A 60 W TO - 220 - 3TubeSiThrough Hole60 W- 55 C  
IRGS6B60KDPBF


International Rectifier IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
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Infineon Availability : 0
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USD 1.4639
Multiples of: 1

Single600 V2 V+/- 20 V13 A100 nA  D - PAK - 3TubeSiSmd/Smt90 W- 55 C+ 150 CRc
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