About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKB40N65EH5ATMA1


IGBT Transistors 40A 650V TRENCHSTOP 5 fast H5 IGBT copacked with 40A Rapid 1 diode
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USD 2.6631

Multiples of: 1

Single650 V1.65 V20 V74 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt250 W- 40 C+ 175 CTrenchstop 5
IRG8P08N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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USD 2.675

Multiples of: 1

Single1200 V1.7 V30 V15 A100 nA89 W TO - 247AC - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
IGW25N120H3XK


IGBT Transistors IGBT PRODUCTS
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USD 2.7197

Multiples of: 1

Single1200 V2.05 V+/- 20 V50 A600 nA  TO - 247 - 3TubeSiThrough Hole326 W- 40 C+ 175 CHighspeed 3
IRG7PH28UD1PBF


Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube
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USD 2.7217

Multiples of: 165

 1200 V2.3 V30 V30 A100 uA  TO - 247AC - 3Tube Through Hole115 W   
IRG7PH35U-EP


IGBT Transistors IGBT DISCRETES
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USD 2.7247

Multiples of: 1

 1.2 kV2.2 V 55 A   TO - 247 - 3TubeSiThrough Hole210 W   
IRG4PC40FDPBF


IGBT Transistors 600V Fast 1-8kHz
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USD 2.7327

Multiples of: 1

Single600 V1.7 V+/- 20 V49 A 160 W TO - 247Tube Through Hole - 55 C  
IHW30N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 30A
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USD 2.7375

Multiples of: 1

Single600 V1.5 V+/- 20 V30 A   TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIhw30n60
IRG4PC50KPBF


Transistor: IGBT; 600V; 30A; 200W; TO247-3
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USD 2.7933

Multiples of: 161

Single600 V2.2 V+/- 20 V52 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C  
IRG7PH44K10DPBF


IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
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USD 2.7942

Multiples of: 1

Single1200 V2.4 V+/- 30 V70 A100 nA320 W TO - 247AC - 3TubeSiThrough Hole320 W- 40 C+ 150 C 
IRG4PH40UDPBF


Transistor: IGBT; 1200V; 41A; 160W; TO247-3
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USD 2.8142

Multiples of: 3

Single1.2 kV3.5 V+/- 20 V30 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
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