About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AIKW50N65DF5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.077

Multiples of: 1

         TubeSi    Trenchstop 5 F5
IRGPS40B120UPBF


IGBT Transistors 1200V UltraFast 8-25kHz Single IGBT
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Infineon Availability : 0
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USD 6.0986

Multiples of: 1

Single1.2 kV3.5 V+/- 20 V80 A 595 W TO - 274AATubeSiThrough Hole595 W- 55 C  
AIKW30N60CTXKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.104

Multiples of: 1

         TubeSi    600V Trenchstop
IKFW60N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
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Infineon Availability : 0
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USD 6.104

Multiples of: 1

Single600 V1.85 V20 V63 A100 nA  TO - 247 - 3TubeSiThrough Hole164 W- 40 C+ 175 C600V Trenchstop
IRG4PC60UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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USD 6.1113

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Single600 V2 V+/- 20 V75 A   TO - 247 - 3Tube Through Hole520 W- 55 C+ 150 C 
IKW50N60TA


Infineon Technologies IGBT Transistors 600V 50A 100nA
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Infineon Availability : 0
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USD 6.1286

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Single600 V1.95 V20 V50 A100 nA  TO - 247TubeSiThrough Hole333 W- 40 C+ 150 CIkw50n60
IRG4PSC71KPBF


Transistor: IGBT; 600V; 85A; 350W; SUPER247
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USD 6.1428

Multiples of: 1

Single600 V2.3 V+/- 20 V85 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
IRG4BC40U


IGBTs 600V 40A TO-220 (TO-220-3) RoHS
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USD 6.1679

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         Tube - Packed      
IRGP4266D-EPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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USD 6.2177

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Single650 V1.7 V20 V140 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 40 C+ 175 C 
AIGW50N65H5XKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 6.24

Multiples of: 1

Single650 V1.66 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 H5
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