About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKY40N120CH3XKSA1


IGBT Transistors INDUSTRY 14
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USD 6.7021
Multiples of: 1

Single1200 V2 V20 V80 A100 nA  TO 247 - 4 - 2TubeSiThrough Hole500 W- 40 C+ 175 C 
IRGP6690D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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USD 6.7749
Multiples of: 1

Single600 V1.65 V20 V140 A200 nA  TO - 247AD - 3TubeSiThrough Hole483 W- 40 C+ 175 C 
IRG8P50N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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USD 6.9048
Multiples of: 25

Single1200 V1.7 V30 V80 A300 nA350 W TO - 247AC - 3TubeSiThrough Hole350 W- 40 C+ 150 C 
AIKW50N65DH5XKSA1


Transistor: IGBT; 650V; 53.5A; 136W; TO247-3
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USD 6.9144
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      136 W   Trenchstop 5     
IRGP20B120UD-EP


IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
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USD 7.1087
Multiples of: 63

Single1.2 kV3.05 V+/- 20 V40 A   TO - 247 - 3Tube Through Hole300 W- 55 C+ 150 C 
IRG7PH46UPBF


IGBT Transistors 1200V 108A
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USD 7.1875
Multiples of: 1

Single1.2 kV2 V+/- 30 V130 A200 nA469 W TO - 247TubeSiThrough Hole469 W- 55 C+ 175 C 
IRG7PH42UD-EP


IGBT Transistors 1200V Trench IGBT Generic Ind App
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USD 7.1998
Multiples of: 1

Single1.2 kV2 V+/- 30 V85 A 320 W TO - 247Tube Through Hole - 55 C  
IRGP4790DPBF


Transistor: IGBT; 650V; 140A; 455W; TO247-3
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USD 7.2028
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      455 W         
AIGW50N65F5XKSA1


IGBT Transistors DISCRETES
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USD 7.28
Multiples of: 1

Single650 V1.66 V30 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 F5
AUIRGP4066D1


Transistor: IGBT; IGBT Trench; 600V; 90A; 227W; TO247AC
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USD 7.5845
Multiples of: 1

 600 V2.1 V20 V140 A100 nA454 WAec - Q101TO - 247TubeSiThrough Hole454 W   
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First...8182838485...

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