About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8182838485...
First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG7PSH54K10DPBF


IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 9.4022
Multiples of: 1

Single1200 V2.4 V+/- 30 V120 A200 nA520 W SUPER - 247 - 3TubeSiThrough Hole520 W- 40 C+ 150 C 
IRG4PSC71KDPBF


IGBT Transistors 600V UltraFast 8-25kHz
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USD 9.5603
Multiples of: 1

Single600 V2.3 V+/- 20 V85 A100 nA350 W TO - 274AATubeSiThrough Hole350 W- 55 C+ 150 C 
IKFW90N60EH3XKSA1


IGBT Transistors High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
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Infineon Availability : 0
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USD 9.6281
Multiples of: 1

Single600 V1.85 V20 V77 A100 nA  TO - 247 - 3TubeSiThrough Hole178 W- 40 C+ 175 C600V Trenchstop
IRG8P60N120KD-EPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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USD 9.7625
Multiples of: 1

Single1200 V1.7 V30 V100 A400 nA  TO - 247AD - 3TubeSiThrough Hole420 W- 40 C+ 150 C 
AIKQ120N60CTXKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 10.0112
Multiples of: 1

         TubeSi    600V Trenchstop
IKQ120N60TAXKSA1


Transistor: IGBT; 600V; 120A; 833W; TO247-3
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USD 10.1031
Multiples of: 39

      833 W   Trenchstop     
IRG4PC50UPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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Infineon Availability : 0
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USD 10.4409
Multiples of: 1

Single600 V2 V20 V55 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
IRG4PSH71UPBF


IGBT Transistors 1200V UltraFast 8-40kHz
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USD 10.582
Multiples of: 1

Single1.2 kV2.7 V+/- 20 V99 A 350 W TO - 274AATubeSiThrough Hole350 W- 55 C  
AUIRGP4063D-E


International Rectifier IGBT Transistors Automotive 600V Trench IGBT
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USD 11.1094
Multiples of: 1

 600 V2.14 V20 V96 A100 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole330 W   
AIKW75N60CTXKSA1


IGBT Transistors DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 11.4725
Multiples of: 1

         TubeSi    600V Trenchstop
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First...8182838485...

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