About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTG11N120CND


IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd
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USD 3.015

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      298 W         
FGH50T65SQD-F155


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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USD 2.9652

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FGH60N60SMD


igbts field stop 600v 120a to-247 (ac) rohs
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ON Semiconductor Availability : 1942
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USD 3.2755

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FGD2736G3-F085


IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor Availability : 1897
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USD 0.9025

Multiples of: 1

Single360 V1.45 V+/- 14 V21 A25 uA  TO - 252 - 3Cut Tape Smd/Smt150 W- 40 C+ 175 C 
HGTG5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor Availability : 1728
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USD 2.0671

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Single1200 V2.45 V+/- 20 V21 A+/- 250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 150 CHgtg5n120bnd
FGD3N60LSDTM


IGBT Transistors 600V IGBT HID Application
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USD 0.6371

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Single600 V +/- 20 V    DPAK - 3ReelSiSmd/Smt - 55 C+ 150 CFgd3n60
FGP20N60UFDTU


IGBT Transistors 600V, 20A Field Stop
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USD 1.8811

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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CFgp20n60ufd
NGTB25N120FL3WG


IGBT Transistors IGBT 1200V 25A FS3 SOLAR/
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USD 2.9093

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Single1.2 kV1.7 V+/- 20 V100 A200 nA  TO 247 - 3TubeSiThrough Hole349 W- 55 C+ 175 C 
FGP10N60UNDF


IGBT Transistors 600V 10A NPT IGBT
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USD 0.9108

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Single600 V2.3 V+/- 20 V20 A+/- 10 uA139 W TO - 220TubeSiThrough Hole139 W- 55 C+ 150 CFgp10n60undf
FGL60N100BNTDTU


IGBT Transistors HIGH_POWER
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ON Semiconductor Availability : 873
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USD 19.7535

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Single1000 V1.5 V+/- 25 V60 A+/- 500 nA180 W TO - 264 - 3TubeSiThrough Hole180 W- 55 C+ 150 CFgl60n100bntdtu
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