About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT28IH125DF


STMicroelectronics IGBT Transistors 1250V 25A trench gte field-stop IGBT
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STMicroelectronics Availability : 0
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USD 3.088
Multiples of: 600

Single1.25 kV2.65 V+/- 20 V60 A250 nA  TO - 3P - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
STGW40H65DFB-4


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
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STMicroelectronics Availability : 0
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USD 3.1311
Multiples of: 600

Single650 V1.6 V+/- 20 V80 A250 uA  TO - 247 - 4 SiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb - 4
STGP15M120F3


IGBT Transistors Trench gate field-stop 1200 V 15 A low-loss M series IGBT in a TO-220 package
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STMicroelectronics Availability : 0
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USD 3.1508
Multiples of: 1

Single1.2 kV1.85 V20 V30 A250 nA  TO - 220 - 3 SiThrough Hole259 W- 55 C+ 175 CStgp15m120f3
STGW60V60DF


IGBT Transistors 600V 60A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 0
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USD 3.1954
Multiples of: 1

      375 W         
STGWT80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 3.2055
Multiples of: 1

Single600 V1.85 V20 V120 A250 nA  TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 C600 - 650V Igbts
STGW25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics Availability : 0
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USD 3.2716
Multiples of: 30

Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120f2
STGB30H60DLLFBAG


IGBT Transistors Automotive-grade trench gate field-stop IGBT HB series 600 V 30 A high speed
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STMicroelectronics Availability : 0
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USD 3.291
Multiples of: 1

Single600 V1.7 V20 V30 A250 uA Aec - Q101D2PAK - 3 SiSmd/Smt260 W- 55 C+ 175 CStgb30h60dllfbag
STGW50HF60S


Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247 Tube
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STMicroelectronics Availability : 0
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USD 3.3329
Multiples of: 1

Single        Rail/Tube      
STGW45NC60VD


IGBT Transistors 45 A - 600 V Very Fast IGBT
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STMicroelectronics Availability : 0
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USD 3.3595
Multiples of: 30

Single600 V2.4 V+/- 20 V90 A100 nA270 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CStgw45nc60vd
STGW15H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics Availability : 0
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USD 3.3978
Multiples of: 1

Single1200 V2.1 V20 V30 A250 nA259 W TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 CStgw15h120df2
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