About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.4852
Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGF30V60DF


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 1.4852
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          Si    Stgf30v60df
STGB6M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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STMicroelectronics Availability : 0
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USD 1.4959
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Single650 V1.55 V+/- 20 V12 A+/- 250 uA  D2PAK - 3  Smd/Smt88 W- 55 C+ 175 CStgb6m65df2
SGP02N120XKSA1


IGBT Transistors IGBT PRODUCTS
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USD 1.499
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        TO - 220 - 3TubeSi     
IRGB4615DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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USD 1.5041
Multiples of: 298

Single600 V2 V+/- 20 V23 A100 nA99 W TO - 220AB - 3BulkSiThrough Hole99 W- 40 C+ 175 C 
IGP40N65H5


Transistor: IGBT; 650V; 74A; 250W; TO220-3; Series: H5
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USD 1.5066
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      250 W   Trenchstop 5    H5
IRG4BC20FDPBF


Transistor: IGBT; 600V; 9A; 60W; TO220AB
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USD 1.5066
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Single600 V2 V+/- 20 V16 A 60 W TO - 220 - 3TubeSiThrough Hole60 W- 55 C  
FGH40T70SHD_F155


IGBT Transistors 650V FS Gen3 Trench IGBT
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ON Semiconductor Availability : 0
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USD 1.5085
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Single700 V2.37 V+/- 20 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole268 W- 55 C+ 175 CFgh40t70shd
IRG4PC30UPBF


IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT
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USD 1.5125
Multiples of: 20

Single600 V2.1 V+/- 20 V23 A   TO - 247 - 3Tube Through Hole100 W- 55 C+ 150 C 
IRG7IA19UPBF


IGBT Transistors 330V 15A 1.57VFP PDP SMPS
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USD 1.5205
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 360 V1.52 V 30 A 35 W TO - 220 - 3TubeSiThrough Hole35 W   
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