About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...161162163164165...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
HGTP12N60A4D


Transistor: IGBT; 600V; 23A; 167W; TO220
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ON Semiconductor Availability : 0
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USD 2.2561
Multiples of: 199

                
STGW35HF60WDI


STMicroelectronics IGBT Transistors 35 A 600 V Ultra fast IGBT
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STMicroelectronics Availability : 0
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USD 2.2585
Multiples of: 1

         TubeSi    Stgw35hf60wdi
STGW45HF60WD


IGBT Transistors 45A 600V Ultra Fast IGBT
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STMicroelectronics Availability : 0
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USD 2.261
Multiples of: 1

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wd
IRG4PC40SPBF


International Rectifier IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
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Infineon Availability : 0
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USD 2.2628
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Single600 V1.5 V+/- 20 V60 A 160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
NGTB25N120IHLWG


IGBT Transistors IGBT 1200V 25A FS1 Induction Heating
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ON Semiconductor Availability : 0
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USD 2.2631
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 1200 V 20 V50 A 250 W TO - 247TubeSiThrough Hole250 W  Ngtb25n120ihl
IXYY8N90C3


IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
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IXYS Availability : 0
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USD 2.2667
Multiples of: 1

Single900 V2.5 V20 V20 A100 nA  TO - 252 - 3TubeSiSmd/Smt - 55 C+ 175 CPlanar
IRG4BC30FD1PBF


IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode
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Infineon Availability : 0
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USD 2.2741
Multiples of: 50

Single600 V1.8 V+/- 20 V31 A 100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C  
STGP35HF60W


STMicroelectronics IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
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STMicroelectronics Availability : 0
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USD 2.275
Multiples of: 50

Single600 V1.65 V20 V60 A100 nA200 W TO - 220TubeSiThrough Hole200 W- 55 C+ 150 CStgp35hf60w
IXGH85N30C3


IGBT Transistors 85 Amps 300V
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IXYS Availability : 0
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USD 2.2815
Multiples of: 1

Single300 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh85n30
NGTB40N120SWG


ON Semiconductor IGBT Transistors FSII 40A 1200V Welding
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ON Semiconductor Availability : 0
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USD 2.2816
Multiples of: 1

Single1.2 kV2 V+/- 20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 55 C+ 175 C 
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