About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB30N60L2WG


N-CHANNEL IGBT WITH LOW VF SWITCHING DIODE 600V 30A VCE(sat); 1.4V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 2.6178
Multiples of: 1

         TubeSi     
NGTG15N120FL2WG


IGBT Transistors 1200V/15A VERY FAST IGBT
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ON Semiconductor Availability : 0
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USD 2.6206
Multiples of: 166

         TubeSi     
IHW30N110R3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 2.622
Multiples of: 1

Single1100 V1.55 V20 V60 A100 nA333 W TO - 247TubeSiThrough Hole333 W- 40 C+ 175 CIhw30n110
STGFW30V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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STMicroelectronics Availability : 0
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USD 2.6285
Multiples of: 1

Single600 V1.85 V+/- 20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
IRG4PH40UD2-EP


IGBT Transistors 1200V UltraFast 5-40kHz
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Infineon Availability : 0
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USD 2.6424
Multiples of: 25

Single1.2 kV3.1 V+/- 20 V41 A100 nA160 W TO - 247ADTubeSiThrough Hole160 W- 55 C+ 150 C 
STGW50H65DFB2-4


IGBT Transistors Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
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STMicroelectronics Availability : 0
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USD 2.6606
Multiples of: 1

         Tube      
AOK20B135D1


Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
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Alpha & Omega Availability : 0
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USD 2.6691
Multiples of: 1

  1.57 V   170 W         
FGA4060ADF


IGBT Transistors 650V FS Gen3 Trench IGBT proliferation
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ON Semiconductor Availability : 0
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USD 2.6727
Multiples of: 163

Single600 V1.8 V30 V80 A400 nA  TO - 3PNBulkSiThrough Hole238 W- 55 C+ 175 CFga4060adf
IXGH36N60A3


IGBT Transistors GenX3 600V IGBTs
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IXYS Availability : 0
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USD 2.6739
Multiples of: 1

        TO - 247AD - 3TubeSi    Ixgh36n60
IRG8P08N120KDPBF


International Rectifier IGBT Transistors 1200V IGBT GEN8
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Infineon Availability : 0
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USD 2.675
Multiples of: 1

Single1200 V1.7 V30 V15 A100 nA89 W TO - 247AC - 3TubeSiThrough Hole89 W- 40 C+ 150 C 
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