About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
KGF75N60KDB


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

KEC Availability : 0
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USD 3.1071

Multiples of: 1

                
IRG7PH35UD1PBF


IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
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Infineon Availability : 0
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USD 3.1146

Multiples of: 125

Single1.2 kV2.2 V+/- 30 V50 A   TO - 247 - 3Tube Through Hole179 W- 55 C  
SGB07N120


IGBT Transistors FAST IGBT NPT TECH 1200V 8A
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Infineon Availability : 0
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USD 3.12

Multiples of: 1

Single1200 V +/- 20 V    TO - 263 - 3ReelSiSmd/Smt - 55 C+ 150 CSgb07n120
NGTB50N120FL2WAG


IGBT Transistors 1200V/50 FAST IGBT FSII T
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 3.1307

Multiples of: 1

Single1200 V2.8 V+/- 20 V200 A200 nA  TO - 247 - 4TubeSiThrough Hole536 W- 55 C+ 175 CNgtb50n120fl2wa
STGW40H65DFB-4


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
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STMicroelectronics Availability : 0
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USD 3.1311

Multiples of: 600

Single650 V1.6 V+/- 20 V80 A250 uA  TO - 247 - 4 SiThrough Hole283 W- 55 C+ 175 CStgw40h65dfb - 4
NGTB25N120FL2WAG


IGBT Transistors 1200V/25 FAST IGBT FSII T
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ON Semiconductor Availability : 0
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USD 3.1409

Multiples of: 1

         TubeSi     
SG40T120DB


Transistor: IGBT; 1.2kV; 40A; 300W; TO247AD
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Sirectifier Availability : 0
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USD 3.15

Multiples of: 1

      300 W         
STGP15M120F3


IGBT Transistors Trench gate field-stop 1200 V 15 A low-loss M series IGBT in a TO-220 package
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STMicroelectronics Availability : 0
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USD 3.1508

Multiples of: 1

Single1.2 kV1.85 V20 V30 A250 nA  TO - 220 - 3 SiThrough Hole259 W- 55 C+ 175 CStgp15m120f3
NGTB40N120LWG


IGBT Transistors 1200V/40A FS1 IGBT
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ON Semiconductor Availability : 0
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USD 3.1531

Multiples of: 1

Single1200 V1.9 V20 V80 A200 nA260 W TO - 247TubeSiThrough Hole260 W- 55 C+ 150 CNgtb40n120l
NGTB40N65IHL2WG


IGBT Transistors 650V/40A FAST IGBT FSII T
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 3.1586

Multiples of: 138

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