About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

IRG4PC50FDPBF

Transistor: IGBT; 600V; 70A; 200W; TO247-3

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
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USD 4.4212

Multiples of: 25

200 W

IRGP4750DPBF

IGBT Transistors 650V UltraFast IGBT TO-247

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
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USD 4.4239

Multiples of: 1

Single

650 V

1.7 V

+/- 20 V

70 A

100 nA

TO - 247AC - 3

Tube

Through Hole

273 W

- 40 C

+ 175 C

Trenchstop

IXYH40N65C3

IGBT Transistors 650V/80A XPT C3-Class TO-247

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
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USD 4.4242

Multiples of: 1

Single

650 V

1.85 V

30 V

80 A

100 nA

TO - 247AD - 3

Tube

Through Hole

300 W

- 55 C

+ 175 C

Ixyh40n65

APT45GR65B

IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
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USD 4.4505

Multiples of: 1

Single

650 V

1.9 V

30 V

118 A

250 nA

TO - 247 - 3

Tube

Through Hole

543 W

- 55 C

+ 150 C

NGTB50N120FL2WG

IGBT Transistors 1200V/50A FAST IGBT FSII

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
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USD 4.4513

Multiples of: 7

Single

1200 V

2.2 V

30 V

100 A

200 nA

535 W

TO - 247

Tube

Through Hole

535 W

- 55 C

+ 175 C

Ngtb50n120fl2

IXGH10N60AU1

IGBT Transistors G-series A,B,C

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
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USD 4.4544

Multiples of: 1

Tube

Ixgh10n60

IXSH30N60B2D1

IGBT Transistors 30 Amps 600V 2.5 Rds

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
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USD 4.4544

Multiples of: 1

Single

600 V

2 V

+/- 20 V

+/- 100 nA

250 W

TO - 247 - 3

Tube

Through Hole

- 55 C

+ 150 C

Ixsh30n60

IXSA20N60B2D1

IGBT Transistors 20 Amps 600V 2.5 Rds

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
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51	15	16	17	18	19	20	21
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USD 4.4552

Multiples of: 1

Single

600 V

2.5 V

+/- 20 V

+/- 100 nA

190 W

TO - 263 - 3

Tube

Smd/Smt

- 55 C

+ 150 C

Ixsa20n60

IRG8P25N120KDPBF

International Rectifier IGBT Transistors 1200V IGBT GEN8

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0
Ship by 6 to 16 Weeks

December 2024

December 2024
	S	M	T	W	T	F	S
48	24	25	26	27	28	29	30
49	1	2	3	4	5	6	7
50	8	9	10	11	12	13	14
51	15	16	17	18	19	20	21
52	22	23	24	25	26	27	28
53	29	30	31	1	2	3	4

USD 4.4568

Multiples of: 104

Single

1200 V

1.7 V

30 V

40 A

100 nA

180 W

TO - 247AC - 3

Tube

Through Hole

180 W

- 40 C

+ 150 C

NGTB40N135IHRWG

IGBT Transistors 1350V/40A IGBT FSII TO-24

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
Ship by 6 to 16 Weeks

December 2024