About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXXH30N65C4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-264(3)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 4.4821
Multiples of: 1

Single       TO - 247 - 3Tube Through Hole230 W- 55 C+ 175 C 
STGW75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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STMicroelectronics Availability : 0
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USD 4.4906
Multiples of: 1

Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole468 W- 55 C+ 175 CStgw75m65df2
FGH25T120SMD_F155


IGBT Transistors 1200V, 25A Field Stop Trench IGBT
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ON Semiconductor Availability : 0
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USD 4.495
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Single1200 V1.9 V+/- 25 V50 A400 nA428 W TO - 247G03 - 3TubeSiThrough Hole428 W- 55 C+ 175 CFgh25t120
FGH60N60SFDTU


IGBT Transistors N-Ch/ 60A 600V FS
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ON Semiconductor Availability : 0
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USD 4.4952
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Single600 V +/- 20 V    TO - 247AB - 3Tube Through Hole - 55 C+ 150 CFgh60n60
IXXH30N60B3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 4.5026
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         TubeSi     
IXXH80N65B4


IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
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IXYS Availability : 0
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USD 4.509
Multiples of: 1

Single650 V1.65 V20 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole625 W- 55 C+ 175 CIxxh80n65
IRG7PH35UDPBF


IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
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Infineon Availability : 0
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USD 4.5158
Multiples of: 1

Single1.2 kV2.2 V+/- 30 V50 A100 nA180 W TO - 247TubeSiThrough Hole180 W- 55 C+ 150 C 
FGH75T65UPD-F155


IGBT Transistors 650V,75A Field Stop Trench IGBT
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ON Semiconductor Availability : 0
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USD 4.5304
Multiples of: 1

               Fgh75t65upd
IHW30N120R3FKSA1


IGBT Transistors IGBT PRODUCTS TrenchStop RC
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Infineon Availability : 0
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USD 4.5305
Multiples of: 1

Single1200 V1.55 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 175 CIhw30n120
IRG4PC50UD-EPBF


IGBT Transistors 600V UltraFast 8-60kHz Copack IGBT
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Infineon Availability : 0
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USD 4.5567
Multiples of: 1

Single600 V2 V+/- 20 V55 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C  
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First...206207208209210...

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