About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYX100N120C3


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 11.8143
Multiples of: 1

Single1200 V2.9 V30 V188 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole1150 W- 55 C+ 175 CIxyx100n120c3
IXYA8N250CHV


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-263D2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS Availability : 0
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USD 11.8164
Multiples of: 1

Single       TO - 263HV - 3Tube Smd/Smt280 W- 55 C+ 175 C 
HGTG40N60B3


IGBT Transistors 600V N-Channel IGBT UFS Series
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 11.9451
Multiples of: 30

Single600 V1.4 V+/- 20 V70 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole290 W- 55 C+ 150 CHgtg40n60b3
APT75GN60BDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
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Microchip Availability : 0
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USD 11.998
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      536 W   Field Stop     
APT40GR120S


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 12.0065
Multiples of: 1

         TubeSi     
NTE3310


Transistor: IGBT; 600V; 15A; 100W; TO3P
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NTE Availability : 0
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USD 12.0312
Multiples of: 1

      100 W         
NTE3302


Transistor: IGBT; 600V; 8A; 30W; TO220FP
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NTE Availability : 0
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USD 12.0343
Multiples of: 1

      30 W         
IRGPS4067DPBF


International Rectifier IGBT Transistors 600V 1.6V 120A Solar UPS Welding
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Infineon Availability : 0
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USD 12.039
Multiples of: 38

 600 V2.05 V20 V240 A400 nA  TO - 247 - 3-SiThrough Hole750 W   
FGY160T65SPD-F085


Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube
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ON Semiconductor Availability : 0
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USD 12.048
Multiples of: 30

Single650 V1.6 V+/- 20 V240 A+/- 250 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
IXGH6N170


IGBT Transistors 12 Amps 1700 V 4 V Rds
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IXYS Availability : 0
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USD 12.096
Multiples of: 1

Single1.7 kV3 V20 V12 A100 nA  TO - 247AD - 3TubeSiThrough Hole75 W- 55 C+ 150 CIxgh6n170
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