About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGB3236_F085


Fairchild Semiconductor IGBT Transistors 320MJ 360V N-CH IGNITION IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 530
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USD 1.9625
Multiples of: 1

         ReelSi    Fgb3236_F085
STGWT40V60DLF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 525
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USD 2.2893
Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
RGW60TS65GC11


IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
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ROHM Availability : 525
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USD 2.5875
Multiples of: 1

Single650 V1.5 V30 V60 A200 nA  TO - 247N - 3TubeSiThrough Hole178 W- 40 C+ 175 C 
IKP10N60T


Transistor: IGBT; 600V; 10A; 110W; TO220AB
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Infineon Availability : 524
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USD 0.8441
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      110 W         
IKP30N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon Availability : 522
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USD 1.4835
Multiples of: 1

Single650 V1.65 V20 V55 A100 nA  TO - 220 - 3TubeSiThrough Hole188 W- 40 C+ 175 CTrenchstop 5 H5
FGH80N60FD2TU


IGBT Transistors 600V 80A Field Stop
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ON Semiconductor Availability : 519
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USD 3.266
Multiples of: 1

Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CFgh80n60fd2
FGH40N60SFTU


IGBT Transistors N-CH / 40A 600V FS Planar
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ON Semiconductor Availability : 517
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USD 2.346
Multiples of: 1

Single600 V2.3 V20 V80 A400 nA290 W TO - 247Tube Through Hole - 55 C+ 150 CFgh40n60
FGHL40T65MQD


IGBT Transistors 650 V 40 A FS4
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ON Semiconductor Availability : 517
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USD 2.1505
Multiples of: 1

         Tube      
IKA10N65ET6XKSA2


Transistor: IGBT; 650V; 9A; 20W; TO220FP; Series: T6
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Infineon Availability : 514
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USD 1.1845
Multiples of: 1

      20 W   Trenchstop 6    T6
IGP10N60TXKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 10A
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Infineon Availability : 512
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USD 0.7325
Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CTrenchstop Igbt
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