About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...5657585960...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4066PBF


IGBT Transistors 600V Low VCEon Trench IGBT
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Infineon Availability : 1
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USD 6.3484

Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247TubeSiThrough Hole454 W- 55 C  
IXyH100N65C3


Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
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IXYS Availability : 1
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USD 8.9618

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      830 W   Genx3, Planar, Xpt     
FGH60N60SMD-F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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ON Semiconductor Availability : 1
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USD 9.3251

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Single600 V2.14 V+/- 20 V120 A400 nA  TO - 247 - 3 SiThrough Hole600 W- 55 C+ 175 CFgh60n60sm_F085
FGL40N120ANDTU


Transistor: IGBT; 1.2kV; 40A; 200W; TO264
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ON Semiconductor Availability : 1
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USD 10.1543

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      200 W         
IXXH110N65C4


IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
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IXYS Availability : 1
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USD 11.228

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Single650 V1.98 V20 V234 A100 nA  TO - 247AD - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxh110n65
SGM40HF12A1TFD


611ns -40℃~+150℃@(Tj) 425ns 40A 1.2kV IGBT模块 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V 2.6V@40A 80A - IGBTs ROHS
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Silan Availability : 1
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USD 13.1089

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APT40GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 1
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USD 15.435

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          Si     
IXBH12N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 1
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USD 33.0286

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Single3 kV2.8 V+/- 20 V30 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole160 W- 55 C+ 150 C 
APT35GP120J


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 1
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USD 47.446

Multiples of: 1

          POWER MOS 7®, PT     
IXGH36N60B3C1


IGBT Transistors 75Amps 600V
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IXYS Availability : 1
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USD 61.04

Multiples of: 1

 600 V1.5 V+/- 20 V75 A100 nA  TO - 247AD - 3TubeSicThrough Hole250 W- 55 C+ 150 CIxgh36n60
IXYH30N170C


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS Availability : 0
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USD 18.6033

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        TO - 247AD - 3TubeSiThrough Hole   High Voltage
KWRFF100R12SWM


IGBTs ROHS
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JUNSHINE Availability : 0
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USD 21.0122

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MG100HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 39.7162

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7MBR50XPA120-50


IGBT Transistors / Modules ROHS
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Fuji Availability : 0
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USD 58.2667

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APT15GP90BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 0
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USD 0

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KWKFF450R12SC


IGBTs M2 RoHS
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KWBW25N120F4EG


IGBTs TO-247 RoHS
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EG2181


IGBT SOP-8 RoHS
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GD100HFF120C1S


IGBTs RoHS
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USD 0

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MGD623S


IGBTs 600V 50A TO3P-3L RoHS
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Sanken Availability : 0
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