X-On Electronics has gained recognition as a prominent supplier of SGM40HF12A1TFD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SGM40HF12A1TFD IGBT Transistors are a product manufactured by Silan. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SGM40HF12A1TFD Silan

SGM40HF12A1TFD electronic component of Silan
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Part No.SGM40HF12A1TFD
Manufacturer: Silan
Category: IGBT Transistors
Description: 611ns -40℃~+150℃@(Tj) 425ns 40A 1.2kV IGBT模块 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V 2.6V@40A 80A - IGBTs ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.4331 ea
Line Total: USD 14.43 
Availability - 1
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 14.4331
10 : USD 13.1089

   
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We are delighted to provide the SGM40HF12A1TFD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SGM40HF12A1TFD and other electronic components in the IGBT Transistors category and beyond.

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The SGM40HF12A1TFD is a DirectFET RoHS-compliant IGBT module manufactured by Silan. It is designed for use in demanding applications which require high speed switching and high efficiency. The module is rated for up to 40A with a maximum voltage of 1.2kV. It has an ultra-fast switching time of 611ns at -40°C to +150°C (Tj). The IGBT features 425ns turn-on/off time, with a Collector Emitter Voltage of 5.5V @ 250uA and a Collector Emitter Saturation Voltage of 413nC @ 40A. It also has a Gate Emitter Voltage of ±15V and a Gate Emitter Leakage Current of 2.6V @ 20A. The IGBT Energy Loss per Cycle is 2.2mJ and the Total Energy Loss is 9.3mJ. Additionally, it has a Gate Emitter Off Voltage of 1mA @ 1.2kV and a Gate Capacitance of 6.58nF @ 25V. The module also has a Source Emitter Voltage of 2.6V @ 40A and a load current of 80A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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