Product Information

SGM40HF12A1TFD

SGM40HF12A1TFD electronic component of Silan

611ns -40℃~+150℃@(Tj) 425ns 40A 1.2kV IGBT模块 5.5V@250uA 413nC@40A,±15V 2.6V@20A,15V 2.2mJ 9.3mJ 1mA@1.2kV 6.58nF@25V 2.6V@40A 80A - IGBTs ROHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 16.7612 ea
Line Total: USD 16.76

1 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 15.2333
10 : USD 13.8356

Read More Specifications

     
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Additional Infomation About Product

The SGM40HF12A1TFD is a DirectFET RoHS-compliant IGBT module manufactured by Silan. It is designed for use in demanding applications which require high speed switching and high efficiency. The module is rated for up to 40A with a maximum voltage of 1.2kV. It has an ultra-fast switching time of 611ns at -40°C to +150°C (Tj). The IGBT features 425ns turn-on/off time, with a Collector Emitter Voltage of 5.5V @ 250uA and a Collector Emitter Saturation Voltage of 413nC @ 40A. It also has a Gate Emitter Voltage of ±15V and a Gate Emitter Leakage Current of 2.6V @ 20A. The IGBT Energy Loss per Cycle is 2.2mJ and the Total Energy Loss is 9.3mJ. Additionally, it has a Gate Emitter Off Voltage of 1mA @ 1.2kV and a Gate Capacitance of 6.58nF @ 25V. The module also has a Source Emitter Voltage of 2.6V @ 40A and a load current of 80A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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