About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKWH60N65WR6


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 85
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USD 4.038

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NGTB40N120FL3WG


IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
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ON Semiconductor Availability : 84
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USD 3.9645

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Single1.2 kV1.7 V+/- 20 V160 A200 nA  TO 247 - 3TubeSiThrough Hole454 W- 55 C+ 175 C 
GT40WR21,Q(O


Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
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Toshiba Availability : 84
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USD 11.367

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      375 W         
IGW40N65H5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: H5
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Infineon Availability : 83
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USD 1.955

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      250 W   Trenchstop 5    H5
FGHL40T120SWD


TO-247-3LD IGBTs ROHS
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ON Semiconductor Availability : 83
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USD 4.6337

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APT15GN120BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip Availability : 83
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USD 8.375

Multiples of: 1

      195 W   Field Stop     
APT33GF120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip Availability : 82
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USD 9.231

Multiples of: 1

Single1.2 kV2.5 V30 V52 A100 nA  TO - 247 - 3TubeSiThrough Hole297 W- 55 C+ 150 C 
STGB20M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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STMicroelectronics Availability : 81
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USD 1.2971

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DG50X12T2


Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
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STARPOWER Availability : 79
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USD 7.294

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      592 W         
APT15GP90BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 79
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USD 7.6989

Multiples of: 1

      250 W   POWER MOS 7®, PT     
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