About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGD3245G2_F085


Fairchild Semiconductor IGBT Transistors EcoSPARK2-450V Ignition IGBT
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USD 1.0232

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Single450 V1.64 V+/- 10 V23 A   TO - 252AA - 3ReelSiSmd/Smt150 W- 40 C+ 175 CFgd3245g2_F085
IRGIB15B60KD1P


Transistor: IGBT; 600V; 19A; 52W; TO220AB
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USD 1.0256

Multiples of: 1

Single600 V1.8 V+/- 20 V19 A 52 W TO - 220 - 3 FPTubeSiThrough Hole52 W- 55 C  
IRG4BC10UDPBF


Transistor: IGBT; 600V; 8.5A; 38W; TO220AB
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USD 1.0268

Multiples of: 1

Single600 V2.6 V+/- 20 V8.5 A 38 W TO - 220 - 3TubeSiThrough Hole38 W- 55 C  
FGP5N60UFDTU


IGBT Transistors 600V, 5A Field Stop
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USD 1.0296

Multiples of: 400

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CFgp5n60
AOTF10B65M2


Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
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USD 1.0312

Multiples of: 1

  1.6 V   12 W         
LGB18N40ATH


Littelfuse D2PAK, IGBT3
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Littelfuse Availability : 0
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USD 1.0332

Multiples of: 1

      115 W         
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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USD 1.0356

Multiples of: 1

 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
STGB14NC60KDT4


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 0
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USD 1.0356

Multiples of: 1

Single600 V2.1 V+/- 20 V 2 A  D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb14nc60kd
NGTB15N120IHLWG


IGBT Transistors 1200V/15A IGBT LPT TO-2
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USD 1.0377

Multiples of: 30

 1200 V 20 V30 A   TO - 247Tube Through Hole250 W  Ngtb15n120ihl
IRG4PH20KPBF


Transistor: IGBT; 1200V; 11A; 60W; TO247-3
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Infineon Availability : 0
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USD 1.0435

Multiples of: 25

Single1.2 kV3.17 V+/- 20 V11 A 60 W TO - 247TubeSiThrough Hole60 W- 55 C  
STGWT20H60DF


IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.0445

Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 CStgwt20h60df
STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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STMicroelectronics Availability : 0
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USD 1.0494

Multiples of: 50

Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
IRGS4B60KD1TRLP


IGBT Transistors 600V 10A
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Infineon Availability : 0
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USD 1.0668

Multiples of: 1

Single600 V2.1 V+/- 20 V11 A100 nA63 W D2PAKReelSiSmd/Smt63 W- 55 C+ 175 CRc
AOT10B65M2


Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
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USD 1.0719

Multiples of: 1

  1.6 V   75 W         
FGB5N60UNDF


IGBT Transistors 600V 5A NPT IGBT
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ON Semiconductor Availability : 0
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USD 1.0757

Multiples of: 391

Single600 V2.4 V+/- 20 V10 A+/- 10 nA73.5 W TO - 263AB (D2 PAK)TubeSiSmd/Smt73.5 W- 55 C+ 150 CFgb5n60undf
STGB25N40LZAG


IGBT Transistors Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
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STMicroelectronics Availability : 0
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USD 1.0777

Multiples of: 1

 400 V1.25 V16 V25 A625 uA Aec - Q101D2PAK - 3  Smd/Smt150 W- 55 C+ 175 CStgb25n40lzag
AOTF15B65M3


Transistor: IGBT; 650V; 15A; 12W; TO220F; Eoff: 0.19mJ; Eon: 0.28mJ
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USD 1.0856

Multiples of: 1

  1.95 V   12 W         
AOTF15B60D2


Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ
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Alpha & Omega Availability : 0
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USD 1.0856

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  1.53 V   16.7 W         
SGT20N60FD1PN


IGBTs TO-3P RoHS
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Silan Availability : 0
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USD 1.0907

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IRGS6B60KPBF


International Rectifier IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT
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USD 1.0976

Multiples of: 1

Single600 V1.8 V+/- 20 V13 A100 nA  D - PAK - 3TubeSiSmd/Smt90 W- 55 C+ 150 CRc
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